A study has been carried out of the stability of silicon surfaces when they are provided with a chemically bound solid‐solid interface. Stable surfaces have been obtained with the system silicon‐silicon dioxide when the oxide is thermally grown. This latter system has been studied in some detail. In this paper the following phases of our investigation are presented: (i) some aspects of the thermal oxidation process and properties of the oxide; (ii) the electronic properties of the resulting silicon‐silicon dioxide interface; (iii) the application of the process to devices and resulting device characteristics.
Gap junctions formed by different connexins are expressed throughout the body and harbour unique channel properties that have not been fully defined mechanistically.r Recent structural studies by cryo-electron microscopy have produced high-resolution models of the related but functionally distinct lens connexins (Cx50 and Cx46) captured in a stable open state, opening the door for structure-function comparison.r Here, we conducted comparative molecular dynamics simulation and electrophysiology studies to dissect the isoform-specific differences in Cx46 and Cx50 intercellular channel function.r We show that key determinants Cx46 and Cx50 gap junction channel open stability and unitary conductance are shaped by structural and dynamic features of their N-terminal domains, in particular the residue at the 9th position and differences in hydrophobic anchoring sites.r The results of this study establish the open state Cx46/50 structural models as archetypes for structure-function studies targeted at elucidating the mechanism of gap junction channels and the molecular basis of disease-causing variants.
In the process of growing an oxide on doped silicon, electrically active impurities near the silicon/silicon dioxide interface are redistributed according to the diffusion coefficients and the distribution coefficient of the impurity between the oxide and the semiconductor. An analysis of the phenomenon predicts that single‐junction or two‐junction material can be obtained by oxidation of the surface of a compensated silicon crystal. For parabolic growth of the oxide, the surface concentration is independent of time, and the junction depth, gradient and sheet resistivity vary with t1/2. This has been demonstrated experimentally by oxidation of a compensated p‐type silicon crystal doped with gallium and antimony.
Glossary of Symbols Potential drop across space charge region at equilibrium. Difference between Fermi level and bottom of conduction band deep Difference between Fermi level and top of valence band at the con-Applied reverse bias. Negative of intercept on V , axis of plot of 1/C2 versus TI , . Energy gap in semiconductor, 1.100 ev for silicon. Potential drop across separation between metal and semiconductor at equilibrium. Potential drop across separation between metal and semiconductor with applied bias V , . Work function of metal. Electronegativity of semiconductor. Charge in space charge region in semiconductor. Charge in surface states on semiconductor (positive for donor and Magnitude of electronic charge (positive quantity). Dielectric constant of semiconductor, 11.8 for silicon. Width of separation between metal and semiconductor. Donor density in semiconductor. Electron density in body of semiconductor. Dielectric constant of separation between metal and semiconductor. Electron density in body of intrinsic semiconductor, 3.9 X 10 T exp (-0.605 ev/kT) for silicon. Differential capacitance ( d Q / d V ) .
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