Stability of LPCVD Polysilicon Gates on Thin Oxides

Murarka, S. P.; Sinha, A. K.; Levinstein, H. J.

doi:10.1149/1.2129492

Cited by 7 publications

(2 citation statements)

References 3 publications

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“…Thus, the {111} planes will be delineated after the etching. On a Si(100) substrate, the {111} planes form a tetragonal network, and can be seen upon KOH etching as tetragonal pits (which appear as squares when seen through an optical microscope) 18,19 The mechanism is shown schematically in Fig. 6a.…”

Section: Resultsmentioning

confidence: 99%

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Electrical Behavior of Cu Thin Fluorinated PECVD Oxide MIS Capacitors

Mallikarjunan

Murarka

Steinbrüchel

et al. 2000

J. Electrochem. Soc.

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This paper reports the results of extensive bias temperature annealing investigations made with metal-insulator semiconductor (MIS) capacitors of copper and fluorinated plasma-enhanced chemical vapor deposition (PECVD) oxide. Reduction of resistancecapacitance delay is necessary to improve interconnect performance. While copper has been accepted as the new interconnect metal, several low dielectric constant materials are being considered as potential replacements for silicon oxide. Fluorinated silicon oxides deposited by the PECVD process have a moderately low dielectric constant (K ϭ 3.0-3.7). The film structure and electrical behavior of fluorinated films was found to depend on the flow rate of the fluorine precursor C 2 F 6 . In several cases, both fluorinated and nonfluorinated oxides exhibit significant leakage currents. The reason for such poor electrical behavior has been related to the presence of pinholelike defects (which were identified by KOH etch testing) in these oxides. The existence of such pinholes is believed to be associated with nucleation and growth processes during the deposition and the thickness of the deposited dielectric (100 nm) used in this investigation.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 128.255.6.125 Downloaded on 2015-03-15 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 128.255.6.125 Downloaded on 2015-03-15 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 128.255.6.125 Downloaded on 2015-03-15 to IP

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Section: Resultsmentioning

confidence: 99%

“…Deposition parameters are given in Table I. All fluorinated films had 8-9% fluorine concentration as determined by NRA using the nuclear reaction 12 1 1 H ϩ 19 9 F r 2 4 He ϩ 16 8 O ϩ ␥ and counting the emitted ␥ photons.…”

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confidence: 99%