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In device-manufacturing technology, it is important to understand why dielectric films crack. With this objective in mind, we have constructed an apparatus for measurement of thermal stresses in thin films (25–500 °C), obtained results on various reactively plasma deposited (RPD) Si-N and CVD SiO2 films, and developed a model which quantifies the cracking resistance of different types of RPD Si-N films. Measurements were made of the coefficient of thermal expansion α (T), which increases on going from SiO2→Si3N4→SiN→Si and the intrinsic stress, which is compressive for RPD Si3N4, nearly zero for thermal SiO2 and tensile for RPD SiN and CVD SiO2. The cracking resistance of Si-N film at a given temperature is functionally related to its density, intrinsic stress, thermal mismatch with Si, and the deposition temperature.

The effect of aluminum masks on the plasma etch rates of polysilicon and silicon nitride

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