Sputtering of the target surface by Cs+ ions: Steady-state concentration of implanted cesium and emission of CsM+ cluster ions

ToF-SIMS Depth Profiling of Metal, Metal Oxide, and Alloy Multilayers in Atmospheres of H2, C2H2, CO, and O2

“…On the other hand, Cs 2 M + and Cs 2 MO + cluster ions show better results and are often used in the so-called MCs + approach. 35 , 36 These signals can be normalized to the Cs + or Cs 2 + signals. In our case, normalization to the Cs + signal is not effective because the Cs + signal is saturated.…”

“…If Cs + ions were used for the etching, the positive secondary ions have a very low intensity and are strongly influenced by the matrix effect originating from the Cs implantation and the sample oxidation during preparation. On the other hand, Cs 2 M + and Cs 2 MO + cluster ions show better results and are often used in the so-called MCs + approach. , These signals can be normalized to the Cs + or Cs 2 + signals. In our case, normalization to the Cs + signal is not effective because the Cs + signal is saturated.…”

“…Ar + ions are the most frequently used. ,− Other options include Xe + ions ,, and the reactive Cs + and O 2 + ions. , Cs + ions increase the yield of negative secondary ions in SIMS spectrometry due to their incorporation into the surface of the sample with a consequent reduction of the work function . Cs + ions also make possible the analysis of cluster secondary ions, which are mainly formed as MCs n + , , where M stands for any metal atoms. On the other hand, O 2 + ions increase the yield of positive secondary ions during SIMS depth profiling .…”