Metallurgical Coatings and Thin Films 1992 1992
DOI: 10.1016/b978-0-444-89900-2.50057-9
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Sputtered silver and Cr–C films for applications as interconnect materials

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Cited by 3 publications
(4 citation statements)
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“…Owing to variations in XPS instrument sensitivity factors, the former method was chosen to determine F/C ratios for 14 SPTFE-A and 15 SPTFE-H repeat runs, yielding the following average values and standard deviations: 1.49 ± 0.04 and 1.56 ± 0.03, respectively. These F/C ratios fall within the range of prior F/C ratios for SPTFE (1.3−1.6), ,, but they are distinctly higher than the F/C ratios of 0.78 and 1.02 observed by Ryan et al for Ar- and He-sputtered PTFE, respectively, or the F/C ratio of 0.89 obtained by Hishmeh et al for Ar-sputtered PTFE. In work to be reported elsewhere, we have obtained F/C ratios for SPTFE films formed using Ne, Kr, and Xe as sputtering gases (also at a power of 10 W) that were similar to those for SPTFE-A and -H, namely, 1.48 ± 0.07, 1.44 ± 0.05, and 1.55 ± 0.01, respectively.…”
Section: Resultssupporting
confidence: 72%
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“…Owing to variations in XPS instrument sensitivity factors, the former method was chosen to determine F/C ratios for 14 SPTFE-A and 15 SPTFE-H repeat runs, yielding the following average values and standard deviations: 1.49 ± 0.04 and 1.56 ± 0.03, respectively. These F/C ratios fall within the range of prior F/C ratios for SPTFE (1.3−1.6), ,, but they are distinctly higher than the F/C ratios of 0.78 and 1.02 observed by Ryan et al for Ar- and He-sputtered PTFE, respectively, or the F/C ratio of 0.89 obtained by Hishmeh et al for Ar-sputtered PTFE. In work to be reported elsewhere, we have obtained F/C ratios for SPTFE films formed using Ne, Kr, and Xe as sputtering gases (also at a power of 10 W) that were similar to those for SPTFE-A and -H, namely, 1.48 ± 0.07, 1.44 ± 0.05, and 1.55 ± 0.01, respectively.…”
Section: Resultssupporting
confidence: 72%
“…Considerable literature exists on the infrared (IR) or X-ray photoelectron spectroscopic (XPS) characterization of the products obtained from plasma polymerization of tetrafluoroethylene (TFE), and a somewhat smaller body of literature exists on the IR or XPS characterization of the fluoropolymer deposits formed in the rf plasma sputtering of poly(tetrafluoroethylene) (PTFE). ,, Several references have noted that the structures of the fluoropolymer deposits arising from rf-sputtered PTFE (SPTFE) were similar to those of plasma-polymerized TFE (PPTFE). ,, In none of these earlier studies were SPTFE and PPTFE prepared in the same plasma reactor. Tibbitt et al, who apparently first reported the remarkable similarity of the IR spectra of PPTFE and SPTFE, suggested that the mechanism of rf sputtering of PTFE resembled that of plasma polymerization of TFE.…”
Section: Introductionmentioning
confidence: 99%
“…Also, PIs have as good tribological properties as poly(tetrafluoroethylene) (PTFE). PI thin films were sputtered onto metal and glass substrates, and their morphologies and tribological properties were evaluated [8][9][10][11][12][13]. The PI thin films are thought to have a disadvantage for manufacturing on an industrial scale because the sputtering rate of PI thin films is much lower than that of sputtered PTFE thin films.…”
Section: Introductionmentioning
confidence: 99%
“…[9][10][11][12][13] The effects of various experimental parameters, such as sputtering gas, voltage, RF input power, magnetic field, target/ substrate distance, pressure, and gas composition, on the properties of the deposited fluorocarbons have been investigated. 11,[13][14][15][16][17][18][19] With physicochemical and dielectric properties comparable to those of PTFE, poly(tetrafluoroethylene-co-hexafluoropropylene) (FEP) is another potential dielectric polymer for highfrequency applications, provided that the processability issue of FEP can also be resolved. In this regard, RF sputtering deposition of FEP films appears to be an attractive approach and warrants a detailed study as in the case of RF sputtering deposition of PTFE.…”
Section: Introductionmentioning
confidence: 99%