Sputter deposition of Sn-doped ZnO/Ag/Sn-doped ZnO transparent contact layer for GaN LED applications

Park, Nae-Man; Oh, Min Seok; Na, Yun-Been; Cheong, Woo‐Seok; Kim, Hyunsoo

doi:10.1016/j.matlet.2016.05.111

Cited by 15 publications

(5 citation statements)

References 29 publications

(28 reference statements)

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“…Conventional μLED requires a transparent contact layer and an upper p-electrode to achieve efficient carrier injection (Fig. S2) 12,13 . However, the transparent contact layer, p-electrode, and n-electrode were eliminated in this work because external carrier injection was avoided.…”

Section: Resultsmentioning

confidence: 99%

Electroluminescence from μLED without external charge injection

Wang

Liu

et al. 2020

Sci Rep

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Stable electroluminescence from micro-pixelated light-emitting diode (μLeD) occurs when electrons and holes are continuously injected from external electrodes. Different from the general recognition, in this work, μLED works in an operation mode, namely, non-electrical contact and non-carrier injection mode, and can be 'wirelessly' lit up without external charge injection, which is different from the general recognition. inherent holes and electrons in μLEDs can provide sufficient carriers for radiative recombination under alternating-current electric field. A possible model related to the diffusion of majority carrier and the drift of minority carrier in μLED was proposed, which is further confirmed by the employment of a 'carrier pump'. Finally, the intrinsic characteristics of the device-in-capacitor, namely, self-protection against electrical breakdown, were discussed. This work demonstrates a new device configuration and an alternative operating mode for μLeD and provides a research manner to obtain advanced μLeD-based technology.

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Section: Resultsmentioning

confidence: 99%

Electroluminescence from μLED without external charge injection

Wang

Liu

et al. 2020

Sci Rep

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“…Moreover, GaN has gained much attention due to its potential applications in series of devices such as LEDs, short wavelength emitters or detectors, high power and high frequency electronic devices [47][48][49]. GaN based LEDs are widely applied in color displays, traffic lights, and solid state lighting [50][51][52]. GaN based semiconductors are highly promising for the fabrication of electronic devices including high electron mobility transistors [53], heterojunction bipolar transistors [54], UV Schottky barrier photodetectors (PDs) [55], and metal semiconductor metal (MSM) PD [56].…”

Section: Gan Propertiesmentioning

confidence: 99%

Review of GaN/ZnO Hybrid Structures Based Materials and Devices

Nahhas¹

2018

NANO

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This paper presents a review of recent advances of Gallium Nitride (GaN) and Zinc Oxide (ZnO) based hybrid structures materials and devices. GaN and ZnO have gained substantial interest in the research area of wide bandgap semiconductors due to their unique electrical, optical and structural properties. GaN and ZnO are important semiconductor materials with applications in blue and ultraviolet (UV) optoelectronics. Both materials have similar physical properties. GaN and ZnO as hybrid material have received much attention due to their unique potential applications. Several potential optical applications are being fabricated based on GaN and ZnO hybrid materials such as optical wave guide, light emitting diodes (LEDs), and laser diodes (LDs). The recent aspects of GaN and ZnO hybrid based devices are presented and discussed.

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“…Modifications of the structural, morphological, optical, chemical, electronic, and physicochemical properties of the ZnO semiconductor nanomaterials either through doping or through the formation of composites have always attracted the researcher to synthesize such materials [ 3 , 4 , 5 , 6 , 7 , 8 , 9 ]. Various doped ZnO nanomaterials have been recently synthesized and explored for their photocatalytic [ 10 , 11 , 12 ], gas sensing [ 13 , 14 ], photonic crystals [ 15 ], spintronics [ 16 ], electrochemical sensing [ 17 , 18 , 19 ], optoelectronics [ 20 , 21 ], dye-sensitized solar cells [ 22 ], light emitting diodes [ 23 ], field emission transistors [ 24 , 25 ], and many more applications. Methods like sol-gel [ 24 , 26 ], hydrothermal [ 18 , 27 ], ceramics vapor deposition [ 28 ], spin coating [ 29 ], solution combustion [ 30 ], RF sputtering [ 31 ], pulse laser deposition [ 32 , 33 ], etc.…”

Section: Introductionmentioning

confidence: 99%

In-Doped ZnO Hexagonal Stepped Nanorods and Nanodisks as Potential Scaffold for Highly-Sensitive Phenyl Hydrazine Chemical Sensors

Umar

Kim

Kumar³

et al. 2017

Materials

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Herein, we report the growth of In-doped ZnO (IZO) nanomaterials, i.e., stepped hexagonal nanorods and nanodisks by the thermal evaporation process using metallic zinc and indium powders in the presence of oxygen. The as-grown IZO nanomaterials were investigated by several techniques in order to examine their morphological, structural, compositional and optical properties. The detailed investigations confirmed that the grown nanomaterials, i.e., nanorods and nanodisks possess well-crystallinity with wurtzite hexagonal phase and grown in high density. The room-temperature PL spectra exhibited a suppressed UV emissions with strong green emissions for both In-doped ZnO nanomaterials, i.e., nanorods and nanodisks. From an application point of view, the grown IZO nanomaterials were used as a potential scaffold to fabricate sensitive phenyl hydrazine chemical sensors based on the I–V technique. The observed sensitivities of the fabricated sensors based on IZO nanorods and nanodisks were 70.43 μA·mM−1·cm−2 and 130.18 μA·mM−1·cm−2, respectively. For both the fabricated sensors, the experimental detection limit was 0.5 μM, while the linear range was 0.5 μM–5.0 mM. The observed results revealed that the simply grown IZO nanomaterials could efficiently be used to fabricate highly sensitive chemical sensors.

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Sputter deposition of Sn-doped ZnO/Ag/Sn-doped ZnO transparent contact layer for GaN LED applications

Cited by 15 publications

References 29 publications

Electroluminescence from μLED without external charge injection

Electroluminescence from μLED without external charge injection

Review of GaN/ZnO Hybrid Structures Based Materials and Devices

In-Doped ZnO Hexagonal Stepped Nanorods and Nanodisks as Potential Scaffold for Highly-Sensitive Phenyl Hydrazine Chemical Sensors

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