Spontaneous ordering in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">GaInP</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>: A polarized-piezomodulated-reflectivity study

Alonso, R.G.; Mascarenhas, A.; Horner, G.S.; Bertness, K. A.; Kurtz, Sarah; Olson, J. M.

doi:10.1103/physrevb.48.11833

Cited by 57 publications

(18 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…3,4,6 Such ordering both lowers the band-gap energy and splits the quadruply degenerate valence band states. These ordering-induced electronic structure changes have been well established by photoluminescence ͑PL͒, 2,6 photoluminescence excitation, 7,8 and polarized piezomodulation 5 spectroscopies as well as more recent exciton absorption bleaching measurements. 9 First-principles and perturbation based electronic structure calculations agree well with these experiments.…”

Section: Introductionmentioning

confidence: 77%

“…The PL spectra for the 1000 Å and 1 m thick samples both show a clear polarization dependence and are peaked at lower energy than that for disordered GaInP 2 , ϳ2.0 eV. 5,8 Specifically, the PL spectra are peaked at 1.901 and 1.886 eV with polarized intensity ratios of 1.91 and 2.44 for the 1000 Å and 1 m samples, respectively. For GaInP 2 layers ordered along the ͓111͔ direction, a decreased band-gap energy along with stronger PL polarized along ͓110͔, the projection of the ͓111͔ ordering direction onto the ͓001͔ sample surface, is expected.…”

Section: Methodsmentioning

confidence: 88%

“…[1][2][3][4][5] These structures resemble monolayer superlattices of Ga ͑1ϩ͒/2 In ͑1Ϫ͒/2 P/Ga ͑1Ϫ͒/2 In ͑1ϩ͒/2 P along the ordering direction. The ordering parameter, , is zero for a random alloy and one for a perfectly ordered GaP and InP monolayer superlattice.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Electroreflectance measurements of electric fields in ordered GaInP2

Perkins

Zhang

Geisz

et al. 1998

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

Ordered Ga0.52In0.48P alloys (GaInP2 for simplicity) grown on miscut [001] GaAs resemble monolayer superlattices with alternating Ga- and In-rich layers along either the [1̄11] or [11̄1] directions. Recent calculations suggest that, in fully ordered GaInP2, an intrinsic ordering-induced electric field of order 1600 kV/cm should exist. In partially ordered samples, as can actually be grown, the expected field is reduced to 400 kV/cm. For such a strong internal electric field, clear Franz–Keldysh Oscillations (FKOs) would be expected in an electroreflectance measurement. We report electroreflectance measurements of ordered GaInP2 layers measured at T=100 K. For all samples measured, no FKOs are observed in the absence of an additional external dc bias voltage. At the lowest bias voltages for which FKOs are seen, the internal electric field in the GaInP2 layer, determined from the FKOs, is ∼60 kV/cm along the [001] direction corresponding to ∼100 kV/cm along the ordering direction. Hence, we conclude that, at least in the organometallic vapor phase epitaxy grown samples studied here, any net macroscopic internal electric field in the GaInP2 layer is less than ∼100 kV/cm along the ordering direction.

show abstract

Section: Introductionmentioning

confidence: 77%

Section: Methodsmentioning

confidence: 88%

See 1 more Smart Citation

Electroreflectance measurements of electric fields in ordered GaInP2

Perkins

Zhang

Geisz

et al. 1998

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

show abstract

“…The lattice symmetry of an ordered alloy reduces from T d (totally disordered) to C 3v (perfectly ordered CuPt-B) [8]. Atomic ordering in the CuPt-B lattice causes many changes in the electronic and optical properties of the III-V semiconductor alloys such as valence band splitting [9], bandgap reduction [10], optical anisotropy [11], second-harmonic generation [12], birefringence [13], and conductivity anisotropy [14]. The degree of ordering in an epitaxial semiconductor film is found to be dependent on the growth conditions.…”

Section: Introductionmentioning

confidence: 99%

Atomic ordering of AlInP grown by MOVPE using TBP with different V/III ratios in pure ambient N2

Zhao

Tang

Teng

et al. 2010

Journal of Crystal Growth

View full text Add to dashboard Cite

“…[1][2][3][4][5][6][7][8][9][10] The long-range ordering of the column III sublattice appears in Ga 0.5 In 0.5 P epitaxial films grown on GaAs ͑001͒ by organometallic vapor-phase epitaxy ͑OM-VPE͒. The epitaxial alloys consist of two ordered phases that show the CuPt-like ordering along the ͓111͔ and ͓111͔, i.e., ͓111͔ and ͓111͔ monolayer superlattices ͑MSLs͒.…”

mentioning

confidence: 99%

Photocurrent polarization in long-range ordered Ga0.5In0.5P

Fujiwara

Nakayama

Nishino

1995

Applied Physics Letters

View full text Add to dashboard Cite

Photocurrent polarization properties near the band gap of long-range ordered Ga0.5In0.5P have been investigated. The linearly polarized PC spectra of the ordered Ga0.5In0.5P show an absorption anisotropy for the [110] and [11̄0] directions together with a large band-gap reduction. The anistotropy in the PC spectra is due to a crystal-field splitting at the valence-band maximum in ordered Ga0.5In0.5P. The PC edge of the [110] polarization is lower at about 10 meV than one of the [11̄0]. The polarization spectra defined by (I110−I11̄0)/(I110+I11̄0), where I110 and I11̄0 are the PC signal intensities measured at the [110] and [11̄0], respectively, show a single broad peak. The maximum polarization reaches about 50% at the energy of the transition between Γ6c and Γ4v, Γ5v. With increased sample temperature, the polarization maximum shifts to the lower energy side according to the change of the Γ6c-Γ4v,Γ5v transition energy. Even at room temperature, a clear polarization signal was observed.

show abstract

Spontaneous ordering inGaInP2: A polarized-piezomodulated-reflectivity study

Cited by 57 publications

References 23 publications

Electroreflectance measurements of electric fields in ordered GaInP2

Electroreflectance measurements of electric fields in ordered GaInP2

Atomic ordering of AlInP grown by MOVPE using TBP with different V/III ratios in pure ambient N2

Photocurrent polarization in long-range ordered Ga0.5In0.5P

Contact Info

Product

Resources

About