Atomic ordering of AlInP grown by MOVPE using TBP with different V/III ratios in pure ambient N2

Zhao, Jinghua; Tang, Xiaohong; Teng, Jinghua; Yong, Anna Marie

doi:10.1016/j.jcrysgro.2010.01.042

Cited by 3 publications

(4 citation statements)

References 28 publications

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“…The discrepancy between the experimental and the theoretical band gap was mainly due to the alloy ordering. The alloy ordering of AlInP is commonly observed, , and the theoretical band gap reduction is 270 meV at a maximum . Third, stacking faults in the WZ AlInP shell may lead to a deep electron trap level because WZ/ZB heterojunctions have type II band lineup in which both the conduction band energy and valence band energy in the ZB phase are lower than those in the WZ phase.…”

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confidence: 99%

Growth of All-Wurtzite InP/AlInP Core–Multishell Nanowire Array

et al. 2017

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We demonstrated the formation of all-wurtzite (WZ) InP/AlInP core-multishell (CMS) nanowires (NWs) by selective-area growth with the crystal structure transfer method. The CMS NWs consisting of an AlInP-based double heterostructure showed that the crystal structure of the multishell succeeded to the WZ phase from the WZ InP NW by the crystal structure transfer method. Transmission electron microscopy revealed that the core-shell interface had a few stacking faults due to lattice mismatch. In addition, lattice constants of WZ AlInP with a variation of Al content were determined by X-ray diffraction reciprocal space mappings, and the WZ AlInP shell had tensile strain along the c-axis. The WZ AlInP shells (Al content: 25-54%) showed cathode luminescence emissions at 1.6-2.1 eV, possibly related to In-rich domains due to composition fluctuation in the WZ AlInP shell.

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confidence: 99%

Growth of All-Wurtzite InP/AlInP Core–Multishell Nanowire Array

et al. 2017

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“…Thereby, the positions of the substitutional aluminum and indium ions in the cation sublattice determine the band structure. 44 , 45 We optimize the atomic geometry of the local atomic configurations in 48-atom supercells. The alloy composition is simulated by distributing the Al (In) atoms in four different ways as discussed below.…”

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confidence: 99%

“…This functional is well-known to give eigenvalues and eigenfunctions close to the quasiparticle excitation. − The ternary compounds are modeled by various local atomic arrangements. Thereby, the positions of the substitutional aluminum and indium ions in the cation sublattice determine the band structure. , We optimize the atomic geometry of the local atomic configurations in 48-atom supercells. The alloy composition is simulated by distributing the Al (In) atoms in four different ways as discussed below.…”

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confidence: 99%

Efficient Green Emission from Wurtzite Al_xIn_1–xP Nanowires

et al. 2018

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Direct band gap III–V semiconductors, emitting efficiently in the amber–green region of the visible spectrum, are still missing, causing loss in efficiency in light emitting diodes operating in this region, a phenomenon known as the “green gap”. Novel geometries and crystal symmetries however show strong promise in overcoming this limit. Here we develop a novel material system, consisting of wurtzite AlxIn1–xP nanowires, which is predicted to have a direct band gap in the green region. The nanowires are grown with selective area metalorganic vapor phase epitaxy and show wurtzite crystal purity from transmission electron microscopy. We show strong light emission at room temperature between the near-infrared 875 nm (1.42 eV) and the “pure green” 555 nm (2.23 eV). We investigate the band structure of wurtzite AlxIn1–xP using time-resolved and temperature-dependent photoluminescence measurements and compare the experimental results with density functional theory simulations, obtaining excellent agreement. Our work paves the way for high-efficiency green light emitting diodes based on wurtzite III-phosphide nanowires.

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“…With the calibrated growth rate of the AlInP epilayer received before, the well layer thicknesses of samples (A) and (B) are $ 10 nm and $ 20 nm, respectively. From our previous studies [13], with the same growth conditions, the energy bandgap offset between the Using the potential profile of the QW structure, U(x), as shown in Fig. 2(b), the ground level transition energies of samples (A) and (B) quantum well structure were calculated as 1.998 eV and 1.958 eV, respectively.…”

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confidence: 99%