Structure and magnetic properties of sputtered thin films of Fe0.79Ge0.21Temperature dependence of the photoreflectance of a strained layer (001) In0.21Ga0.79As/GaAs single quantum wellWe have measured Schottky-barrier electroreflectance spectra of an lllo.79Gao.2IASo.s,P0.46 LPE layer at 81 K. Analysis of the spectra has enabled us to determine the interband reduced mass of the quaternary alloy together with the values of the band gap and spin-orbit splitting. The obtained reduced mass /-L = 0.033 mo.in agreement with the value calculated from interpolations of the accepted values for the related binary compounds.
The temperature dependence of the photoluminescence spectrum of Ga0.5 In0.5 P/GaAs grown by organometallic vapor phase epitaxy is measured. Samples with a highly long-range ordered structure show anomalous behavior, where peak energy changes with temperature exhibiting Z-shape dependence. In the range between 100 and 30 K, peak energy decreases monotonously with decreasing temperature, and below 30 K, begins to increase, splitting into two peaks. The most probable cause of this behavior is crystal defects related to the long-range ordered structure.
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