Spontaneous Emission and Characteristics of Staggered InGaN Quantum-Well Light-Emitting Diodes

Arif, Ronald A.; Zhao, Hongping; Ee, Yik-Khoon; Tansu, Nelson

doi:10.1109/jqe.2008.918309

Cited by 131 publications

(75 citation statements)

References 27 publications

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“…Various possible explanations were proposed as the mechanism for the efficiency-droop in III-nitride LEDs including: (1) carrier leakage [4][5][6], (2) large Auger recombination at high carrier density [10,11], (3) decreased carrier localization at In-rich regions at high injection densities [1], (4) hole transport impediment and consequent electron leakage [7,8], and (5) junction heating [2]. Approaches to enhance radiative efficiency based on novel quantum well design with enhanced optical matrix elements have been demonstrated [12][13][14][15][16][17]. However, the pursuit of novel device structures with high internal quantum efficiency up to high operating current density to address the 'efficiency-droop' still requires further investigation.…”

Section: Introductionmentioning

confidence: 99%

Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes

Zhao

Arif

et al. 2010

Solid-State Electronics

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107

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Section: Introductionmentioning

confidence: 99%

Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes

Zhao

Arif

et al. 2010

Solid-State Electronics

Self Cite

200

107

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“…To follow the k·p method we choose τ sn /τ r , τ sp /τ r ≫ 1, rather than seeking the best possible fit between the two methods. Likewise, we choose ǫ = 0 even though the gain compression could give a better agreement at larger n. The remaining RE parameters are assigned from the previous work [70].…”

Section: Rate Equationsmentioning

confidence: 99%

Wurtzite spin lasers

Faria

Chen

et al. 2017

Phys. Rev. B

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Semiconductor lasers are strongly altered by adding spin-polarized carriers. Such spin lasers could overcome many limitations of their conventional (spin-unpolarized) counterparts. While the vast majority of experiments in spin lasers employed zinc-blende semiconductors, the room temperature electrical manipulation was first emonstrated in wurtzite GaN-based lasers. However, the underlying theoretical description of wurtzite spin lasers is still missing. To address this situation, focusing on (In,Ga)N-based wurtzite quantum wells, we develop a theoretical framework in which the calculated microscopic spin-dependent gain is combined with a simple rate equation model. A small spin-orbit coupling in these wurtzites supports simultaneous spin polarizations of electrons and holes, providing unexplored opportunities to control spin lasers. For example, the gain asymmetry, as one of the key figures of merit related to spin amplification, can change the sign by simply increasing the carrier density. The lasing threshold reduction has a nonmonotonic depenedence on electron spin polarization, even for a nonvanishing hole spin polarization.

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“…Several approaches have been proposed to suppress the detrimental QCSE, including (1) nonpolar and semipolar InGaN QWs [7][8][9][10][11], (2) InGaN QW with d-AlGaN layer [12,13], (3) InGaN-delta-InN QW [14], (4) staggered InGaN QW [15][16][17], (5) type-II InGaN QW [18][19][20][21], (6) ternary substrate approach [22], and (7) triangular QW [23][24][25]. These approaches engineer the InGaN QWs band structure and the optical matrix element is larger than the conventional case, which in turn leads to significant augmentation of the radiative recombination rate and the optical gain.…”

mentioning

confidence: 99%

Optical properties of a novel parabolic quantum well structure in InGaN/GaN light emitters

Yan

Yang

et al. 2015

Physica Status Solidi (a)

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We theoretically investigate the optical properties of conventional, normal (type A) parabolic and novel (type B) parabolic InGaN quantum well (QW) for blue light emitters. Two specially designed active layer structures by parabolic-shaped QW are proposed, and the optical characteristics of these two parabolic QW structures are calculated and compared to those of conventional QW structures. The electron-hole wavefunction overlap (G e-hh ) of type-B parabolic QWs is 2.8 times (69.6%) that in the conventional QW (24.8%), and the spontaneous emission rate is ninefold that of conventional QWs. The transparency carrier density of type-B parabolic QWs is much smaller than type-A parabolic or conventional QW. These results can be attributed to a higher indium index in the center of the type-B parabolic QWs, and that leads to better confinement of carriers wavefunctions.

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Spontaneous Emission and Characteristics of Staggered InGaN Quantum-Well Light-Emitting Diodes

Cited by 131 publications

References 27 publications

Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes

Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes

Wurtzite spin lasers

Optical properties of a novel parabolic quantum well structure in InGaN/GaN light emitters

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