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The existence of high threading dislocation density (TDD) in GaN-based epilayers is a long unsolved problem, which hinders further applications of defect-sensitive GaN-based devices. Multiple-modulation of epitaxial lateral overgrowth (ELOG) is used to achieve high-quality GaN template on a novel serpentine channel patterned sapphire substrate (SCPSS). The dislocation blocking brought by the serpentine channel patterned mask, coupled with repeated dislocation bending, can reduce the dislocation density to a yet-to-be-optimized level of ∼2 × 10(5) to 2 × 10(6) cm(-2). About 80% area utilization rate of GaN with low TDD and stress relaxation is obtained. The periodical variations of dislocation density, optical properties and residual stress in GaN-based epilayers on SCPSS are analyzed. The quantum efficiency of InGaN/GaN multiple quantum wells (MQWs) on it can be increased by 52% compared with the conventional sapphire substrate. The reduced nonradiative recombination centers, the enhanced carrier localization, and the suppressed quantum confined Stark effect, are the main determinants of improved luminous performance in MQWs on SCPSS. This developed ELOG on serpentine shaped mask needs no interruption and regrowth, which can be a promising candidate for the heteroepitaxy of semipolar/nonpolar GaN and GaAs with high quality.

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This study compared the result of percutaneous release using a miniscalpel-needle and steroid injection in 93 trigger thumbs in 83 patients. The patients were randomly assigned to either miniscalpel-needle percutaneous release (group A) or steroid injection (group B). Visual analogue pain scales and patients' satisfaction were evaluated at baseline, 1 and 12 months. One patient in group A and two patients in group B were lost to follow-up. Forty-four of the 46 trigger thumbs in group A and 12 of 47 trigger thumbs in group B had satisfactory results at 12 months. No digital nerve injury occurred in either group. Percutaneous release with a miniscalpel-needle had a higher success rate than steroid injection.

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We theoretically investigate the optical properties of conventional, normal (type A) parabolic and novel (type B) parabolic InGaN quantum well (QW) for blue light emitters. Two specially designed active layer structures by parabolic-shaped QW are proposed, and the optical characteristics of these two parabolic QW structures are calculated and compared to those of conventional QW structures. The electron-hole wavefunction overlap (G e-hh ) of type-B parabolic QWs is 2.8 times (69.6%) that in the conventional QW (24.8%), and the spontaneous emission rate is ninefold that of conventional QWs. The transparency carrier density of type-B parabolic QWs is much smaller than type-A parabolic or conventional QW. These results can be attributed to a higher indium index in the center of the type-B parabolic QWs, and that leads to better confinement of carriers wavefunctions.

Implementing quantum algorithms on realistic devices requires translating high-level global operations into sequences of hardware-native logic gates, a process known as quantum compiling. Physical limitations, such as constraints in connectivity and gate alphabets, often result in unacceptable implementation costs. To enable successful near-term applications, it is crucial to optimize compilation by exploiting the capabilities of existing hardware. Here we implement a resource-efficient construction for a quantum version of AND logic that can reduce the compilation overhead, enabling the execution of key quantum circuits. On a high-scalability superconducting quantum processor, we demonstrate low-depth synthesis of high-fidelity generalized Toffoli gates with up to 8 qubits and Grover’s search algorithm in a search space of up to 64 entries. Our experimental demonstration illustrates a scalable and widely applicable approach to implementing quantum algorithms, bringing more meaningful quantum applications on noisy devices within reach.