Split-Gate 1.2-kV 4H-SiC MOSFET: Analysis and Experimental Validation

Han, Kijeong; Baliga, B. Jayant; Sung, Woongje

doi:10.1109/led.2017.2738616

Cited by 65 publications

(31 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Also, the information of device geometry is usually not available to users [15]. As a result, they are mostly used at the design stage of SiC MOSFETs [16].…”

Section: Introductionmentioning

confidence: 99%

Hybrid Data-Driven Modeling Methodology for Fast and Accurate Transient Simulation of SiC MOSFETs

Yang

Ming

Liang

et al. 2022

IEEE Trans. Power Electron.

View full text Add to dashboard Cite

To enable fast and accurate models of SiC MOS-FETs for transient simulation, a hybrid data-driven modeling methodology of SiC MOSFETs is proposed. Unlike conventional modeling methods that are based on complex nonlinear equations, data-driven Artificial Neural Networks (ANNs) are used in this paper. For model accuracy, the I-V characteristics are measured in the whole operation region to train the ANN. The ANN model is then combined with behavior-based equations to model the cutoff region and to avoid overfitting the ANN. In addition, the C-V characteristics are modeled by ANNs with a logarithmic scale for accuracy. The proposed model is implemented and simulated in SPICE simulator SIMetrix. The simulation results are compared with experimental results from a double-pulse tester to validate the proposed modeling methodology. The model is also compared with the Angelov model created by the Keysight MOSFET modeling software. The comparison results show that the proposed model is more accurate than the Angelov model. Besides, when compared to the Angelov model, the proposed model requires 30% less computation time when simulating a double pulse tester. In addition, the proposed modeling method also has better adaptability to model different types of SiC MOSFETs.Index Terms-SiC MOSFET, transient model, hybrid modeling, artificial neural network.

show abstract

“…Also, the information of device geometry is usually not available to users [15]. As a result, they are mostly used at the design stage of SiC MOSFETs [16].…”

Section: Introductionmentioning

confidence: 99%

Hybrid Data-Driven Modeling Methodology for Fast and Accurate Transient Simulation of SiC MOSFETs

Yang

Ming

Liang

et al. 2022

IEEE Trans. Power Electron.

View full text Add to dashboard Cite

show abstract

“…Reduced values for the HF-FOM are desired to achieve improved performance. HF-FOMs for 1.2 kV 4H-SiC power MOSFETs can be significantly improved using the split-gate (SG) and buffered-gate (BG) structures [8]- [10]. Substituting 1.2 kV devices with 2.3 kV devices in solar inverter applications allows using a single-level versus more complex and expensive 2-level and 3-level converters [11].…”

Section: Introductionmentioning

confidence: 99%

“…The split-gate concept is extended to 2.3 kV devices in this paper. For 1.2 kV 4H-SiC SG-MOSFETs, enhanced gate oxide electric field occurs at the SG electrode edge [8]. Optimization of the structure was required to make this electric field below 4 MV/cm to ensure reliable operation.…”

Section: Introductionmentioning

confidence: 99%

2.3 kV 4H-SiC Accumulation-Channel Split-Gate Planar Power MOSFETs With Reduced Gate Charge

Agarwal

Han

Baliga

2020

IEEE J. Electron Devices Soc.

Self Cite

View full text Add to dashboard Cite

2.3 kV 4H-SiC split-gate (SG) planar accumulation-channel power MOSFETs have been successfully manufactured in a 6 inch commercial foundry with good parametric distributions. The measured electrical characteristics of these devices are compared with conventional ACCUFETs manufactured with the same cell-pitch and process to quantify the improved performance. The gate charge and high-frequency figures-of-merit (HF-FOM) of the 2.3 kV SG-MOSFETs were experimentally verified to be a factor of 1.8x better than that of the conventional MOSFETs with no difference in specific on-resistance.INDEX TERMS 4H-SiC, 2.3 kV devices, accumulation channel, C gd , planar-gate MOSFET, Q gd , R on,sp , silicon carbide, split-gate.

show abstract

“…The SiC JBS diode is adopted in this work as a case study. SiC power devices have attracted worldwide attention because of the high critical breakdown field in SiC [18]-for example, SiC MOSFET with protruded p-base [19], split-gate SiC MOSFET [20], SiC diodes [21], and GaN/SiC hybrid field-effect transistors [22]. In this work, we present that the contact to the p-grid exerts little influence on the static characteristics of the SiC JBS diode, including the forward voltage drop (V F ) and the BV.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Electrical Contacts to p-Grid in SiC Power Devices Based on Charge Storage Effect and Dynamic Degradation

Hua

Wei

2020

Electronics

View full text Add to dashboard Cite

P-grid is a typical feature in power devices to block high off-state voltage. In power devices, the p-grid is routinely coupled to an external electrode with an Ohmic contact, but Schottky contact to the p-grid is also proposed/adopted for certain purposes. This work investigates the role of contact to p-grid in power devices based on the commonly adopted technology computer-aided design (TCAD) device simulations, with the silicon carbide (SiC) junction barrier Schottky (JBS) diode as a case study. The static characteristics of the JBS diode is independent of the nature of the contact to p-grid, including the forward voltage drop (VF) and the breakdown voltage (BV). However, during the switching process, a Schottky contact would cause storage of negative charges in the p-grid, which leads to an increased VF during switching operation. On the contrary, an Ohmic contact provides an effective discharging path for the stored negative charges in the p-grid, which eliminates the dynamic degradation issues. Therefore, the necessity of an Ohmic contact to p-grid in power devices is clarified.

show abstract

Split-Gate 1.2-kV 4H-SiC MOSFET: Analysis and Experimental Validation

Cited by 65 publications

References 11 publications

Hybrid Data-Driven Modeling Methodology for Fast and Accurate Transient Simulation of SiC MOSFETs

Hybrid Data-Driven Modeling Methodology for Fast and Accurate Transient Simulation of SiC MOSFETs

2.3 kV 4H-SiC Accumulation-Channel Split-Gate Planar Power MOSFETs With Reduced Gate Charge

Investigation of Electrical Contacts to p-Grid in SiC Power Devices Based on Charge Storage Effect and Dynamic Degradation

Contact Info

Product

Resources

About