Hybrid Data-Driven Modeling Methodology for Fast and Accurate Transient Simulation of SiC MOSFETs

Abstract

To enable fast and accurate models of SiC MOS-FETs for transient simulation, a hybrid data-driven modeling methodology of SiC MOSFETs is proposed. Unlike conventional modeling methods that are based on complex nonlinear equations, data-driven Artificial Neural Networks (ANNs) are used in this paper. For model accuracy, the I-V characteristics are measured in the whole operation region to train the ANN. The ANN model is then combined with behavior-based equations to model the cutoff region and to avoid overfitting the ANN. In addition, the C-V characteristics are modeled by ANNs with a logarithmic scale for accuracy. The proposed model is implemented and simulated in SPICE simulator SIMetrix. The simulation results are compared with experimental results from a double-pulse tester to validate the proposed modeling methodology. The model is also compared with the Angelov model created by the Keysight MOSFET modeling software. The comparison results show that the proposed model is more accurate than the Angelov model. Besides, when compared to the Angelov model, the proposed model requires 30% less computation time when simulating a double pulse tester. In addition, the proposed modeling method also has better adaptability to model different types of SiC MOSFETs.Index Terms-SiC MOSFET, transient model, hybrid modeling, artificial neural network.

A Comparative Study on Parasitic Capacitance in Inductors With Series or Parallel Windings

“…The static layer-to-layer capacitance of inductors with series winding is represented as (4), where the only difference is the radius of the conductor. Detailed derivation could be found in [20].…”

“…Passive components are essential in power electronics converters [1], [2]. For the converters utilizing wide-bandgap devices [3], [4], the parasitic capacitance in magnetic components, including inductors [5], [6], transformers [7] and motors [8], is of significant importance due to the fast switching characteristics (high dv/dt value) of the wide-bandgap devices [8], [9]. It is reported that such parasitic capacitance can significantly contribute to the capacitive current during the switching transients [10] and may result in increased conducted noise and extra switching losses dissipated by the transistors [11]- [14].…”

Dominant Model-Parameter Determination for the Analysis of Current Imbalance Across Paralleled Power Transistors

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Influence of driving and parasitic parameters on the switching behaviors of the SiC MOSFET

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