Spin transport in graphene/transition metal dichalcogenide heterostructures

Abstract

Since its discovery, graphene has been a promising material for spintronics: its low spin-orbit coupling, negligible hyperfine interaction, and high electron mobility are obvious advantages for transporting spin information over long distances. However, such outstanding transport properties also limit the capability to engineer active spintronics, where strong spin-orbit coupling is crucial for creating and manipulating spin currents. To this end, transition metal dichalcogenides, which have larger spin-orbit coupling and good interface matching, appear to be highly complementary materials for enhancing the spin-dependent features of graphene while maintaining its superior charge transport properties. In this review, we present the theoretical framework and the experiments performed to detect and characterize the spin-orbit coupling and spin currents in graphene/transition metal dichalcogenide heterostructures. Specifically, we will concentrate on recent measurements of Hanle precession, weak antilocalization and the spin Hall effect, and provide a comprehensive theoretical description of the interconnection between these phenomena.

Effect of surface pinning on magnetic nanostuctures

“…These combination produces a rich variety of novel physical phenomena strikingly different from the individual constituents. The examples include large exchange bias [9,10], giant magneto-resistance [11], varied interlayer exchange coupling [12], unusual spin transport [13].…”

Tunnel-Field-Effect Spin Filter from Two-Dimensional Antiferromagnetic Stanene

“…Further progresses are expected to be enabled by the investigation of promising combinations of materials and structures [21,22], including ferromagnetics stacks [23], half-metals [24,25], or spin-gapless semiconductors [26,27]. More recently, the raise of graphene [28] opened new possibilities in the field [29,30], unveiling new two-dimensional (2D) materials as potential candidates to be used in spin devices [31][32][33][34][35]. Specifically for graphene, half-metallicity in zig-zag nanoribbons [25,36], defect-induced magnetism [37,38] and spin transport at room temperature [39,40] have been predicted and experimentally demonstrated.…”

Room-Temperature Spin Hall Effect in Graphene/MoS2 van der Waals Heterostructures

“…To solve this issue, methods to artificially induce SOC in graphene have been explored. For instance, the SOC in graphene has been enhanced by chemical doping [11][12][13][14][15][16][17] or by proximity-induced coupling with materials possessing large SOC [18][19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34][35] . The latter method is more convenient since the chemical properties of graphene are not altered, whereas its high-quality electronic transport properties are preserved.Transition metal dichalcogenides (TMDs) with chemical formula MX2 (M=Mo, W and X=S, Se) are layered materials of semiconducting nature displaying unique combined electronic, optical, spintronic and valleytronic properties [36][37][38][39][40][41][42][43][44][45][46][47][48][49][50] .…”