Tunnel-Field-Effect Spin Filter from Two-Dimensional Antiferromagnetic Stanene

Abstract

We propose a device concept, based on monolayer stanene, able to provide highly polarized spin currents (up to a 98%) with voltage-controlled spin polarization operating at room temperature and with small operating voltage (0.3 V). The concept exploits the presence of spin-polarized edge states in a stanene nanoribbon. The spin polarization of the total current can be modulated by a differential tuning of the transmission properties, and of the occupation of edge states of different spin, via the application of an in-plane electric field. We demonstrate device operation using ab-initio and quantum transport simulations. * These authors contributed equally to this work. †

Spin filters based on two-dimensional materials Co2Si and Cu2Si

“…Although the SFE obtained in our model is not close to 100% as predicted by some theoretical results [53,54], in practical devices, the lattice mismatch of the interface between two materials can have a negative effect on the electronic transport and then reduces the SFE. In our device, the good lattice match can result in a high-quality interface, therefore the theoretically predicted SFE in this work is expected to remain in experimental samples of Cu 2 Si/Co 2 Si/Cu 2 Si heterostructure.…”

Multi-scale simulations of two dimensional material based devices: the NanoTCAD ViDES suite

“…1 summarizes elastic transport attributes, highlighting the two main approaches for the materials properties definition: (i) the direct definition of the Hamiltonian by the user in the tight-binding formalism, and (ii) the multiscale procedure, that exploits other codes that are interfaced with NanoTCAD ViDES thanks to Wannier90. This scheme enables the simulation of very different nanoelectronic devices, from novel 2DM-based transistors [ 14 ], to lateral heterostructures [ 9 , 15 ] or vertical heterostructures [ 10 ] of 2DMs, including lower dimensional structures of different 2D materials such as choreographed graphene [ 16 ], or stanene, with the possibility of studying spin transport [ 17 , 18 ], nanowires [ 4 ] and devices with many contacts [ 19 ].…”

“…[ 9 ], d a spin-filter device based on monolayer stanene from Ref. [ 17 ] and e 2DM-based printed devices from Ref. [ 13 ] …”

“…The calculations realized with the code demonstrated (bottom panel) spin-polarized currents up to a 98% with voltage-controlled spin polarization operating at room temperature and with small operating voltage (0.3 V). This device could be useful to explore new concepts of spin injectors or filters, that are fundamental building blocks of spintronics [ 17 ].…”

Spin-valley switch and conductance oscillations in antiferromagnetic transition metal dichalcogenides

“…Antiferromagnetic graphene can be realized by depositing graphene on monolayer MnPSe 3 [50]. In addition, giant seebeck magnetoresistance [51], spin valve [52], spin-valley filter effect [53], tunnel-field-effect spin filter [54], and Andreev reflection [55] are proposed in two-dimensional AFM silicene and stanene. Nevertheless, the works on the spin and valley polarization in AFM TMDs are relatively few.…”