Spin-Transfer Torque Devices for Logic and Memory: Prospects and Perspectives

Fong, Xuanyao; Kim, Yusung; Yogendra, Karthik; Fan, Deliang; Sengupta, Abhronil; Raghunathan, Anand; Roy, Kaushik

doi:10.1109/tcad.2015.2481793

Cited by 164 publications

(69 citation statements)

References 169 publications

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“…3.1.1 Spintronics. Also known as spin electronics, spintronics differ from CMOS technology in various aspects [98][99][100][101][102][103]. First and foremost, in addition to an electronic charge, the spin of electrons is leveraged for both computation and storage/memory.…”

Section: Emerging Devicesmentioning

confidence: 99%

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Hardware Security For and Beyond CMOS Technology

Knechtel¹

2020

Proceedings of the 2020 International Symposium on Physical Design

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As with most aspects of electronic systems and integrated circuits, hardware security has traditionally evolved around the dominant CMOS technology. However, with the rise of various emerging technologies, whose main purpose is to overcome the fundamental limitations for scaling and power consumption of CMOS technology, unique opportunities arise also to advance the notion of hardware security. In this paper, I first provide an overview on hardware security in general. Next, I review selected emerging technologies, namely (i) spintronics, (ii) memristors, (iii) carbon nanotubes and related transistors, (iv) nanowires and related transistors, and (v) 3D and 2.5D integration. I then discuss their application to advance hardware security and also outline related challenges. CCS CONCEPTS• Security and privacy → Security in hardware; • Hardware → Emerging technologies.

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Section: Emerging Devicesmentioning

confidence: 99%

“…Still, manufacturing of spintronics can be made compatible with CMOS processing [99,101]. Fourth, in comparison to CMOS, spintronic devices can offer lower power consumption, built-in memory functionality, built-in reconfigurability, and better scalability [99][100][101][102].…”

Section: Emerging Devicesmentioning

confidence: 99%

Hardware Security For and Beyond CMOS Technology

Knechtel¹

2020

Proceedings of the 2020 International Symposium on Physical Design

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“…Magnetic tunnel junctions (MTJs) with perpendicular magnetic anisotropy (PMA), namely p‐MTJs, have been developed recently for spin‐transfer‐torque magnetic random access memory (STT‐MRAM) . In general, p‐MTJs consist of a free layer (FL) and a reference layer (RL).…”

mentioning

confidence: 99%

“…Magnetic tunnel junctions (MTJs) with perpendicular magnetic anisotropy (PMA), namely p-MTJs, have been developed recently for spin-transfer-torque magnetic random access memory (STT-MRAM). [1][2][3] In general, p-MTJs consist of a free layer (FL) and a reference layer (RL). The FL will be switched by the STT effect from the current polarized by the RL, whose moment is fixed during FL switching.…”

mentioning

confidence: 99%

Structural and Magnetic Properties of Mn₃Ge Grown on a Thin Polycrystalline MgO Seed Layer

Liu¹,

Couet²,

Jochum

et al. 2019

Physica Rapid Research Ltrs

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D022‐Mn3Ge has been studied recently for its large perpendicular magnetic anisotropy (PMA) and low magnetization, which enables it as a potential alternative material for the scaling of magnetic tunnel junctions (MTJs) used in spin‐transfer‐torque magnetic random access memory (STT‐MRAM). Most of the research was carried out on D022‐Mn3Ge deposited by molecular beam epitaxy (MBE) on single crystalline MgO substrates. As the use of single crystalline substrates is not compatible with an industrial integration flow, we developed a polycrystalline MgO seed layer by physical vapor deposition (PVD) on Si. PMA is observed in MBE‐grown D022‐Mn3Ge with coercive field up to 4.5 Tesla, even when the PVD‐MgO seed is only 1 nm thick. It indicates that PVD‐MgO is able to serve as the seed layer for D022‐Mn3Ge integration to MTJs. However, no PMA is observed in Mn3Ge grown by PVD, which is attributed to different kinetics taking place during PVD deposition.

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“…These TI's promise further potential applications in nano-electronics and spintronics [192][193][194]. For example, strong spin-transfer-torque effects have recently been observed at room temperature in a 3D TI [195].…”

Section: Introductionmentioning

confidence: 99%

A non-perturbative treatment of quantum impurity problems in real lattices

Allerdt¹

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Spin-Transfer Torque Devices for Logic and Memory: Prospects and Perspectives

Cited by 164 publications

References 169 publications

Hardware Security For and Beyond CMOS Technology

Hardware Security For and Beyond CMOS Technology

Structural and Magnetic Properties of Mn₃Ge Grown on a Thin Polycrystalline MgO Seed Layer

A non-perturbative treatment of quantum impurity problems in real lattices

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Spin-Transfer Torque Devices for Logic and Memory: Prospects and Perspectives

Cited by 164 publications

References 169 publications

Hardware Security For and Beyond CMOS Technology

Hardware Security For and Beyond CMOS Technology

Structural and Magnetic Properties of Mn3Ge Grown on a Thin Polycrystalline MgO Seed Layer

A non-perturbative treatment of quantum impurity problems in real lattices

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Product

Resources

About

Structural and Magnetic Properties of Mn₃Ge Grown on a Thin Polycrystalline MgO Seed Layer