2018
DOI: 10.1016/j.carbon.2018.01.080
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Spin relaxation and proximity effect in WS2/graphene/fluorographene non-local spin valves

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Cited by 16 publications
(24 citation statements)
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“…The actual spin dynamics will depend on the disorder profile and the nature of the spin-orbit coupling. In graphene/TMDC heterostructures, experimental results suggest that the relaxation mechanism occurs in the DP regime 40,135,141,150,151 , where the spin precession of the electrons is interrupted by scattering events, inducing motional narrowing and yielding τ s ∝ 1/τ p .…”
Section: Microscopic Theory Of Spin Relaxationmentioning
confidence: 99%
“…The actual spin dynamics will depend on the disorder profile and the nature of the spin-orbit coupling. In graphene/TMDC heterostructures, experimental results suggest that the relaxation mechanism occurs in the DP regime 40,135,141,150,151 , where the spin precession of the electrons is interrupted by scattering events, inducing motional narrowing and yielding τ s ∝ 1/τ p .…”
Section: Microscopic Theory Of Spin Relaxationmentioning
confidence: 99%
“…These could range from allepitaxial metallic NLSVs where the high degree of order could place a stronger emphasis on heat conduction across interfaces that could alter thermal profiles, to graphene and other 2D systems with exceptionally high thermal conductivity and potentially poor coupling to supporting substrates. 53,63 V. CONCLUSION…”
Section: B Thermal Modeling and Determination Of Ane Coefficientmentioning
confidence: 99%
“…In addition, to control the spin relaxation in graphene‐based spintronic devices, they demonstrated a WS 2 /graphene/fluorographene heterostructure‐based nonlocal spin valve device. [ 156 ] They established that the D'yakonov‐Perel’ (DP) spin relaxation mechanism was dominant for the WS 2 /graphene/fluorographene devices, and the strong elastic spin‐flip scattering was dominant in the reference fluorographene/graphene devices. They attributed this difference to the WS 2 substrate layer, which reduced elastic scattering and induced proximity effects to produce the SOC‐based DP spin relaxation.…”
Section: Properties and Applications Of Halogenated 2d Materialsmentioning
confidence: 99%