This article reviews static and dynamic interfacial effects in magnetism, focusing on interfacially-driven magnetic effects and phenomena associated with spin-orbit coupling and intrinsic symmetry breaking at interfaces. It provides a historical background and literature survey, but focuses on recent progress, identifying the most exciting new scientific results and pointing to promising future research directions. It starts with an introduction and overview of how basic magnetic properties are affected by interfaces, then turns to a discussion of charge and spin transport through and near interfaces and how these can be used to control the properties of the magnetic layer. Important concepts include spin accumulation, spin currents, spin transfer torque, and spin pumping. An overview is provided to the current state of knowledge and existing review literature on interfacial effects such as exchange bias, exchange spring magnets, spin Hall effect, oxide heterostructures, and topological insulators. The article highlights recent discoveries of interface-induced magnetism and non-collinear spin textures, non-linear dynamics including spin torque transfer and magnetization reversal induced by interfaces, and interfacial effects in ultrafast magnetization processes.

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Polymer-free semiconducting carbon nanotube networks demonstrate unprecedented equivalent n- and p-type thermoelectric performance.

We report the thermal conductivity and specific heat of amorphous silicon thin films measured from 5-300 K using silicon-nitride membrane-based microcalorimeters. Above 50 K the thermal conductivity of thin-film amorphous silicon agrees with values previously reported by other authors. However, our data show no plateau, with a low T suppression of the thermal conductivity that suggests that the scattering of long wavelength, low Q vibrations goes as Q2. The specific heat shows Debye-like behavior below 15 K, with theta(D) = 487 +/- 5 K, and is consistent with a very small contribution of tunneling states in amorphous silicon. Above 15 K, the specific heat deviates less from Debye behavior than does its crystalline allotrope, indicating no significant excess modes (boson peak) in amorphous silicon.