Spin-polarized conduction in oxide magnetic tunnel junctions with magnetic and nonmagnetic insulating barrier layers

Alldredge, L. M. B.; Chopdekar, Rajesh V.; Nelson-Cheeseman, Brittany B.; Suzuki, Yuri

doi:10.1063/1.2372765

Cited by 40 publications

(32 citation statements)

References 22 publications

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“…19 As has been explained in similar Fe 3 O 4 -based junctions, 4,20 we attribute this decrease in JMR at low temperatures to a suppressed Verwey metal-insulator transition of the Fe 3 O 4 thin film electrode, which is consistent with the temperature dependence of the junction resistance. While bulk Fe 3 O 4 undergoes this transition at 120 K, it is common for epi- taxial Fe 3 O 4 films to show a more suppressed Verwey transition with less abrupt changes in resistivity.…”

Section: B Temperature Dependencesupporting

confidence: 74%

Room temperature magnetic barrier layers in magnetic tunnel junctions

et al. 2010

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We investigate the spin transport and interfacial magnetism of magnetic tunnel junctions with highly spin polarized LSMO and Fe 3 O 4 electrodes and a ferrimagnetic NiFe 2 O 4 (NFO) barrier layer. The spin dependent transport can be understood in terms of magnon-assisted spin dependent tunneling where the magnons are excited in the barrier layer itself. The NFO/Fe3O4 interface displays strong magnetic coupling, while the LSMO/NFO interface exhibits clear decoupling as determined by a combination of X-ray absorption spectroscopy and X-ray magnetic circular dichroism. This decoupling allows for distinct parallel and antiparallel electrode states in this all-magnetic trilayer. The spin transport of these devices, dominated by the NFO barrier layer magnetism, leads to a symmetric bias dependence of the junction magnetoresistance at all temperatures.

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Section: B Temperature Dependencesupporting

confidence: 74%

Room temperature magnetic barrier layers in magnetic tunnel junctions

et al. 2010

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“…Another well known material, Fe 3 O 4 , has been predicted to have close to 100% negative spin polarization [169,170] [224]. Disorder and other phases of FeO, depending on the barrier and the oxidation conditions, at the interface are responsible for this behavior.…”

Section: Half-metallic Interfacesmentioning

confidence: 99%

Interface effects in spin-polarized metal/insulator layered structures

Velev

Dowben

Tsymbal

et al. 2008

Surface Science Reports

113

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Recent advances in thin-film deposition techniques, such as molecular beam epitaxy and pulsed laser deposition, have allowed for the manufacture of heterostructures with nearly atomically abrupt interfaces. Although the bulk properties of the individual heterostructure components may be well-known, often the heterostructures exhibit novel and sometimes unexpected properties due to interface effects. At heterostructure interfaces, lattice structure, stoichiometry, interface electronic structure (bonding, interface states, etc.), and symmetry all conspire to produce behavior different from the bulk constituents. This review discusses why knowledge of the electronic structure and composition at the interfaces is pivotal to the understanding of the properties of heterostructures, particularly the (spin polarized) electronic transport in (magnetic) tunnel junctions.

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“…Similar junctions with nonmagnetic barriers also show peaks in the JMR, precluding the possibility that the decrease in the JMR is related to the magnetic transition of the barrier. 9 The symmetric bias dependence of the JMR and the increase in △R in this temperature range suggests that the magnetotransport continues to be dominated by bulk magnon excitations in the NMO barrier layer.…”

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confidence: 99%

“…9 As a function of decreasing temperature, the increase in electrode resistance along with a comparable △R results in an overall decrease in JMR. Similar junctions with nonmagnetic barriers also show peaks in the JMR, precluding the possibility that the decrease in the JMR is related to the magnetic transition of the barrier.…”

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confidence: 99%

Probing the role of the barrier layer in magnetic tunnel junction transport

et al. 2007

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Magnetic tunnel junctions with a ferrimagnetic barrier layer have been studied to understand the role of the barrier layer in the tunneling process -a factor that has been largely overlooked until recently. Epitaxial oxide junctions of highly spin polarized La 0.7 Sr 0.3 MnO 3 and Fe 3 O 4 electrodes with magnetic NiMn 2 O 4 (NMO) insulating barrier layers provide a magnetic tunnel junction system in which we can probe the effect of the barrier by comparing junction behavior above and below the Curie temperature of the barrier layer. When the barrier is paramagnetic, the spin polarized transport is dominated by interface scattering and surface spin waves; however, when the barrier is ferrimagnetic, spin flip scattering due to spin waves within the NMO barrier dominates the transport. 72.25.Mk,75.70.Cn

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Spin-polarized conduction in oxide magnetic tunnel junctions with magnetic and nonmagnetic insulating barrier layers

Cited by 40 publications

References 22 publications

Room temperature magnetic barrier layers in magnetic tunnel junctions

Room temperature magnetic barrier layers in magnetic tunnel junctions

Interface effects in spin-polarized metal/insulator layered structures

Probing the role of the barrier layer in magnetic tunnel junction transport

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