Probing the role of the barrier layer in magnetic tunnel junction transport

Nelson-Cheeseman, Brittany B.; Chopdekar, Rajesh V.; Alldredge, L. M. B.; Bettinger, J. S.; Arenholz, Elke; Suzuki, Yuri

doi:10.1103/physrevb.76.220410

Cited by 40 publications

(37 citation statements)

References 16 publications

(25 reference statements)

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“…19 As has been explained in similar Fe 3 O 4 -based junctions, 4,20 we attribute this decrease in JMR at low temperatures to a suppressed Verwey metal-insulator transition of the Fe 3 O 4 thin film electrode, which is consistent with the temperature dependence of the junction resistance. While bulk Fe 3 O 4 undergoes this transition at 120 K, it is common for epi- taxial Fe 3 O 4 films to show a more suppressed Verwey transition with less abrupt changes in resistivity.…”

Section: B Temperature Dependencesupporting

confidence: 79%

“…5 Such interfacial Mn cation migration effects could also be the reason for the overall lower JMR values of the NFO junctions compared to the paramagnetic NMO junctions previously studied. 4 It is consistent with Mn already present in the NMO barrier layer, resulting in a smaller driving force for Mn of the LSMO to migrate across the interface into the spinelstructure barrier layer, resulting in larger LSMO interfacial spin polarization values and higher JMR values for a given temperature.…”

supporting

confidence: 70%

“…2,3 Recently, we demonstrated that inserting a paramagnetic barrier layer between magnetic electrodes does not preclude the observation of MTJ behavior. 4 A completely ferromagnetic MTJ layer stack has yet to be demonstrated. The nature of spin transport in such MTJ's would provide insight into the role of the barrier layer and interfaces in such junction heterostructures.…”

Section: Introductionmentioning

confidence: 99%

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Room temperature magnetic barrier layers in magnetic tunnel junctions

et al. 2010

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We investigate the spin transport and interfacial magnetism of magnetic tunnel junctions with highly spin polarized LSMO and Fe 3 O 4 electrodes and a ferrimagnetic NiFe 2 O 4 (NFO) barrier layer. The spin dependent transport can be understood in terms of magnon-assisted spin dependent tunneling where the magnons are excited in the barrier layer itself. The NFO/Fe3O4 interface displays strong magnetic coupling, while the LSMO/NFO interface exhibits clear decoupling as determined by a combination of X-ray absorption spectroscopy and X-ray magnetic circular dichroism. This decoupling allows for distinct parallel and antiparallel electrode states in this all-magnetic trilayer. The spin transport of these devices, dominated by the NFO barrier layer magnetism, leads to a symmetric bias dependence of the junction magnetoresistance at all temperatures.

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Section: B Temperature Dependencesupporting

confidence: 79%

supporting

confidence: 70%

Section: Introductionmentioning

confidence: 99%

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Room temperature magnetic barrier layers in magnetic tunnel junctions

et al. 2010

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“…[5][6][7][8][9][10][11][12][13][14][15][16] Symmetry mismatch occurs when the interface is formed from two non-isostructural materials such as an orthorhombic film on a cubic substrate, or even materials consisting of different coordination environments.…”

mentioning

confidence: 99%

Symmetry‐Driven Atomic Rearrangement at a Brownmillerite–Perovskite Interface

Meyer

Jeen

Gao

et al. 2015

Adv Elect Materials

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The design of new materials has transformed considerably over the past decade from an emphasis on tailoring bulk properties to those isolated at the interface between two materials.Undoubtedly, many would argue that the interface is the key to new, multifunctional materials and devices. Examples include the discovery of a 2-dimensional electron gas (2DEG) and thermopower enhancement in LaTiO 3 /SrTiO 3 (STO) heterostructures [1][2][3] , electric-field control of spin polarization between ferroelectric and ferromagnetic film layers [4] and colossal ionic conductivity at the yttria-stabilized ZrO 2 (YSZ)/STO interface [5] . The strong property modification in heterostructures such as these suggests that the structural, electronic, lattice and orbital degrees of freedom at the interface can be tuned from the individual constituents.Many of the interfacial properties that have drawn significant attention have been linked to structural effects induced by lattice or symmetry mismatch. [5][6][7][8][9][10][11][12][13][14][15][16] Symmetry mismatch occurs when the interface is formed from two non-isostructural materials such as an orthorhombic film on a cubic substrate, or even materials consisting of different coordination environments.While it is possible for non-isostructural bilayers to contain a negligible average lattice mismatch, low symmetry materials grown on higher symmetry substrates will likely exhibit an unavoidable non-uniform strain due to different lattice parameters along the in-plane

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“…Recently, ferrimagnetic spinel oxides have been identified as spin filter materials for Fe 3 O 4 based magnetic junctions 1,2 . Moreover, it has been shown that the isostructural interface between half-metallic Fe 3 O 4 electrodes and a spinel barrier layer gives rise to significant junction magnetoresistance that surpass previous rvalues found for Fe 3 O 4 based junctions 3 .…”

mentioning

confidence: 99%

Enhanced magnetization of CuCr2O4 thin films by substrate-induced strain

Iwata

Chopdekar

Wong

et al. 2009

Journal of Applied Physics

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We report the synthesis of epitaxial spinel CuCr 2 O 4 thin films that display enhanced magnetization in excess of 200% of the bulk values when grown on single-crystal (110) MgAl 2 O 4 substrates. Bulk CuCr 2 O 4 is a ferrimagnetic insulator with a net magnetic moment of 0.5μ B due to its distorted tetragonal unit cell (c/a= 1.29) and frustrated triangular moment configuration. We show that through epitaxial growth and substrate-induced strain, it is possible to tune the magnetic functionality of our films by reducing the tetragonal distortion of the unit cell which effectively decreases the frustration of the magnetic moments allowing for an overall greater net moment.

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Probing the role of the barrier layer in magnetic tunnel junction transport

Cited by 40 publications

References 16 publications

Room temperature magnetic barrier layers in magnetic tunnel junctions

Room temperature magnetic barrier layers in magnetic tunnel junctions

Symmetry‐Driven Atomic Rearrangement at a Brownmillerite–Perovskite Interface

Enhanced magnetization of CuCr2O4 thin films by substrate-induced strain

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