Interface effects in spin-polarized metal/insulator layered structures

Velev, Julian P.; Dowben, Peter A.; Tsymbal, Evgeny Y.; Jenkins, Stephen J.; Caruso, Anthony N.

doi:10.1016/j.surfrep.2008.06.002

Cited by 112 publications

(93 citation statements)

References 373 publications

(468 reference statements)

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“…In general, charge screening and other interfacial effects are very sensitive to the exact nature of the interface. 40 Therefore, better experimental characterization of the interfacial structure and further theoretical investigations would be necessary to understand this phenomenon.…”

Section: Resultsmentioning

confidence: 99%

Ferroelectric Control of Magnetocrystalline Anisotropy at Cobalt/Poly(vinylidene fluoride) Interfaces

et al. 2012

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Electric field control of magnetization is one of the promising avenues for achieving high-density energy-efficient magnetic data storage. Ferroelectric materials can be especially useful for that purpose as a source of very large switchable electric fields when interfaced with a ferromagnet. Organic ferroelectrics, such as poly(vinylidene fluoride) (PVDF), have an additional advantage of being weakly bonded to the ferromagnet, thus minimizing undesirable effects such as interface chemical modification and/or strain coupling. In this work we use first-principles density functional calculations of Co/PVDF heterostructures to demonstrate the effect of ferroelectric polarization of PVDF on the interface magnetocrystalline anisotropy that controls the magnetization orientation. We show that switching of the polarization direction alters the magnetocrystalline anisotropy energy of the adjacent Co layer by about 50%, driven by the modification of the screening charge induced by ferroelectric polarization. The effect is reduced with Co oxidation at the interface due to quenching the interface magnetization. Our results provide a new insight into the mechanism of the magnetoelectric coupling at organic ferroelectric/ferromagnet interfaces and suggest ways to achieve the desired functionality in practice.

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Section: Resultsmentioning

confidence: 99%

Ferroelectric Control of Magnetocrystalline Anisotropy at Cobalt/Poly(vinylidene fluoride) Interfaces

et al. 2012

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“…and nanoelectronics [9]. These perspectives have broadened into a search for a new class of multi-functional spintronic materials and structures whose properties can be manipulated by several independent stimuli by affecting physical degrees of freedom set by the order parameters.…”

Section: Introductionmentioning

confidence: 99%

Multi-ferroic and magnetoelectric materials and interfaces

Velev

Jaswal

Tsymbal

2011

Phil. Trans. R. Soc. A.

202

144

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The existence of multiple ferroic orders in the same material and the coupling between them have been known for decades. However, these phenomena have mostly remained the theoretical domain owing to the fact that in single-phase materials such couplings are rare and weak. This situation has changed dramatically recently for at least two reasons: first, advances in materials fabrication have made it possible to manufacture these materials in structures of lower dimensionality, such as thin films or wires, or in compound structures such as laminates and epitaxial-layered heterostructures. In these designed materials, new degrees of freedom are accessible in which the coupling between ferroic orders can be greatly enhanced. Second, the miniaturization trend in conventional electronics is approaching the limits beyond which the reduction of the electronic element is becoming more and more difficult. One way to continue the current trends in computer power and storage increase, without further size reduction, is to use multi-functional materials that would enable new device capabilities. Here, we review the field of multi-ferroic (MF) and magnetoelectric (ME) materials, putting the emphasis on electronic effects at ME interfaces and MF tunnel junctions.

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“…23 Not surprisingly, magneto-electric coupling at the FM/FE interfaces is attracting both theoretical and experimental interest. [23][24][25][26][27] In this context, the study of the magnetic properties of EuO, including the critical exponents, on a ferroelectric substrate is of especial interest because EuO as an insulator has few free carriers. On the other hand, the sizeable energy dispersion of Eu 4f state 18,28 is inconsistent with the Heisenberg model.…”

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confidence: 99%

Magnetoelectric coupling at the EuO/BaTiO3 interface

Cao

Liu

Tang

et al. 2013

Applied Physics Letters

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Magnetization modulation by ferroelectric polarization switching is reported for the ferromagnetic-ferroelectric EuO/BaTiO3 heterostructure. The value of the magnetization critical exponent β is consistent with the expected Heisenberg-like ferromagnetism of EuO and reported Curie temperature. The critical exponent is seen to decrease with increased magnetic coupling. The results are discussed in the context of data obtained earlier for epitaxial La0.67Sr0.33MnO3/BaTiO3 heterostructures, where magnetization increases and critical exponent β also declines with ferroelectric polarization pointing away from ferromagnetic layer. The observed similarity between two systems illustrates an importance of charge doping in magnetoelectric coupling, which can be modulated by ferroelectric polarization reversal.

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Interface effects in spin-polarized metal/insulator layered structures

Cited by 112 publications

References 373 publications

Ferroelectric Control of Magnetocrystalline Anisotropy at Cobalt/Poly(vinylidene fluoride) Interfaces

Ferroelectric Control of Magnetocrystalline Anisotropy at Cobalt/Poly(vinylidene fluoride) Interfaces

Multi-ferroic and magnetoelectric materials and interfaces

Magnetoelectric coupling at the EuO/BaTiO3 interface

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