Boron doped chromia (Cr2O3) thin films with substitutional doping levels between zero and 3% are grown using pulsed laser deposition in borane background gases. Magnetometry reveals a tunable increase in the Néel temperature of the (0001) textured Cr2BxO3−x thin films at a rate of about 10% with 1% oxygen site substitution preserving a net boundary magnetization. Spin resolved inverse photoemission measured after magnetoelectric annealing in subsequently reversed electric fields evidences voltage-controlled reversal of boundary magnetization and thus magnetoelectricity of Cr2BxO3−x. Conservation of magnetoelectricity far above room temperature makes ultra-low power voltage-controlled spintronic devices feasible.

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The surface termination and the nominal valence states for hexagonal LuFeO3 thin films grown on Al2O3(0 0 0 1) substrates were characterized by angle resolved x-ray photoemission spectroscopy. The Lu 4f, Fe 2p and O 1s core level spectra indicate that both the surface termination and the nominal valence depend on surface preparation, but the stable surface terminates in a Fe-O layer. This is consistent with the results of density functional calculations which predict that the Fe-O termination of LuFeO3(0 0 0 1) surface is energetically favorable and stable over a broad range of temperatures and oxygen partial pressures when it is reconstructed to eliminate surface polarity.

From the Cr 2p x-ray magnetic circular dichroism signal, there is clear evidence of interface polarization with overlayers of both Pd and Pt on chromia (CrO). The residual boundary polarization of chomia is stronger for a Pt overlayer than in the case of a Pd overlayer. The reduction of chromia boundary magnetization with a paramagnetic metal overlayer, compared to the free surface, is interpreted as a response to the induced spin polarization in Pt and Pd. Magnetization induced in a Pt overlayer, via proximity to the chromia boundary magnetization, is evident in the polar magneto-optical Kerr measurements. These results are essential to explainations why Pt and Pd are excellent spacer layers for voltage controlled exchange bias, in the [Pd/Co] /Pd/CrO and [Pt/Co] /Pt/CrO perpendicular magneto-electric exchange bias systems. The findings pave the way to realize ultra-fast reversal of induced magnetization in a free moment paramagnetic layer, with possible application in voltage-controlled magnetic random access memory.

Multi-functional thin films of boron (B) doped Cr2O3 exhibit voltage-controlled and nonvolatile Néel vector reorientation in the absence of an applied magnetic field, H. Toggling of antiferromagnetic states is demonstrated in prototype device structures at CMOS compatible temperatures between 300 and 400 K. The boundary magnetization associated with the Néel vector orientation serves as state variable which is read via magnetoresistive detection in a Pt Hall bar adjacent to the B:Cr2O3 film. Switching of the Hall voltage between zero and non-zero values implies Néel vector rotation by 90 degrees. Combined magnetometry, spin resolved inverse photoemission, electric transport and scanning probe microscopy measurements reveal B-dependent TN and resistivity enhancement, spin-canting, anisotropy reduction, dynamic polarization hysteresis and gate voltage dependent orientation of boundary magnetization. The combined effect enables H = 0, voltage controlled, nonvolatile Néel vector rotation at high-temperature. Theoretical modeling estimates switching speeds of about 100 ps making B:Cr2O3 a promising multifunctional single-phase material for energy efficient nonvolatile CMOS compatible memory applications.