Spin polarization in time domain for electrons in a magnetic microstructure

Guo, Qing-Meng; Lu, Mao‐Wang; Huang, Xiaohong; Yang, Shuai-Quan; Qin, Ying-Jie

doi:10.1016/j.vacuum.2021.110059

Cited by 16 publications

(4 citation statements)

References 17 publications

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“…[33] In 2003, Winful [34] discovered the relationship among these times, that is, t dwell = t group −t inter where t inter is the self-interference delay time between incident wave and reflection wave, and thus unified the transmission time calculation into the dwell time. [35] Very recently, Lu et al [36,37] and Guo et al [38] investigated the transmission time and the spin polarization of electrons tunneling through an MMSN. They observed that dwell time is spin-related, and the magnitude and sign of spinpolarized dwell time can be adjusted by changing δ -doping or an applied voltage.…”

Section: Introductionmentioning

confidence: 99%

Separating spins by dwell time of electrons across parallel double δ-magnetic-barrier nanostructure applied by bias

Chen¹,

Lu²,

Cao³

2022

Chinese Phys. B

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The dwell time and spin polarization (SP) of electrons tunneling through a parallel double δ-magnetic-barrier nanostructure in the presence of a bias voltage is studied theoretically in this work. This nanostructure can be constructed by patterning two asymmetric ferromagnetic stripes on the top and bottom of InAs/Al x In1 – x As heterostructure, respectively. An evident SP effect remains after a bias voltage is applied to the nanostructure. Moreover, both magnitude and sign of spin-polarized dwell time can be manipulated by properly changing the bias voltage, which may result in an electrically-tunable temporal spin splitter for spintronics device applications.

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Section: Introductionmentioning

confidence: 99%

Separating spins by dwell time of electrons across parallel double δ-magnetic-barrier nanostructure applied by bias

Chen¹,

Lu²,

Cao³

2022

Chinese Phys. B

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“…Aiming at the complicated problem of calculating the transmission time for an electron to traverse a semiconductor device [17], we propose an alternative numerical approach to evaluate the dwell time of electrons in semiconductor devices, with the help of an improved transfer method (ITMM) [18] and the HGW relationship [15]. Here, we use the ITMM to numerically solve the Schrödinger equation and calculate the dwell time by the HGW relationship for electrons in the semiconductor devices.…”

Section: Introductionmentioning

confidence: 99%

A numerical method to calculate dwell time for electron in semiconductor nanostructure

Xie¹,

Lu²,

Chen³

et al. 2022

Commun. Theor. Phys.

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To some extent, the operational quickness of semiconductor devices depends on the transmission time of electron through semiconductor nanostructures. However, the calculation of transmission time is very difficult, thanks to both contentious definition of the time in quantum mechanics and complicated effective potential functions experienced by electron in semiconductor devices. Here, based on improved transfer matrix method to numerically solve Schrödinger equation and H.G. Winful’s (HGW) relationship to calculate the dwell time, we develop a numerical approach to evaluate the transmission time of electron in semiconductor devices. Compared to exactly resolvable case of rectangular potential barrier, the established numerical approach possesses high precision and small error, which may be employed to explore dynamic response and operating speed of semiconductor devices. This proposed numerical method is successfully applied to the calculation of dwell time for electron in double rectangular potential barriers and the dependence of transmission time on the number of potential barriers is revealed.

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“…Very recently, Lu et al [28][29][30] studied the transmission time and the spin polarization of electrons tunneling through MCSHs. They found that dwell time is spin related, and the magnitude and sign of spin-polarized dwell time can be adjusted by altering δ-doping or an applied voltage.…”

Section: Introductionmentioning

confidence: 99%

Controllable temporal spin splitter via δ-doping in parallel double δ-magnetic-barrier nanostructure

Guo¹,

Chen²,

Cao³

et al. 2021

Semicond. Sci. Technol.

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We theoretically investigate the control of spin-polarized dwell time by δ-doping in a parallel double δ-magnetic-barrier nanostructure, which can be realized experimentally by depositing two asymmetric ferromagnetic stripes at the top and bottom of an InAs/Al x In1−x As heterostructure, respectively. Dwell time is still spin-polarized even if a δ-doping is included inside. Both the magnitude and the sign of the spin-polarized dwell time can be manipulated by changing the weight or position of δ-doping. Therefore, this nanostructure can be employed as a structurally controllable temporal spin splitter for spintronic device applications.

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Spin polarization in time domain for electrons in a magnetic microstructure

Cited by 16 publications

References 17 publications

Separating spins by dwell time of electrons across parallel double δ-magnetic-barrier nanostructure applied by bias

Separating spins by dwell time of electrons across parallel double δ-magnetic-barrier nanostructure applied by bias

A numerical method to calculate dwell time for electron in semiconductor nanostructure

Controllable temporal spin splitter via δ-doping in parallel double δ-magnetic-barrier nanostructure

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