We report a theoretical investigation on effect of a δ-doping on spin-dependent dwell time for electron in embedded magnetic-electric-barrier nanostructure (EMEBN), which is fabricated by depositing a ferromagnetic stripe and a Schottky-metal stripe on top and bottom of
InAs/AlxIn1−xAs heterostructure, respectively. Dwell time still remains spin related after a δ-doping is comprised in EMEBN by atomic-layer doping. Moreover, due to a δ-doping dependent effective potential experienced by electron in this EMEBN,
both magnitude and sign of spin-polarized dwell time can be controlled by changing δ-doping. Therefore, this EMEBN can serve as a controllable temporal spin splitter for spintronics device applications.
We theoretically investigate the wave-vector filtering (WVF) effect for electrons in an antiparallel asymmetric double δ -magnetic-barrier microstructure under a bias, which can be fabricated experimentally by patterning two asymmetric ferromagnetic (FM) stripes on the top and the bottom of GaAs/Al x Ga 1−x As heterostructure, respectively. It is found that an appreciable WVF effect appears because of an essentially two-dimensional (2D) process for electrons across this microstructure. WVF effect is found to be sensitive to the applied bias. WVF efficiency can be tuned by changing bias, which may lead to an electrically-controllable momentum filter for nanoelectronics device applications.
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