Spin-orbit-coupling induced electron-spin polarization in magnetically and electrically confined semiconductor microstructure

Yang, Shuai-Quan; Lu, Mao‐Wang; Guo, Qing-Meng; Qin, Ying-Jie; Xie, Shi-Shi

doi:10.1016/j.rinp.2021.104898

Cited by 5 publications

(2 citation statements)

References 31 publications

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“…Þthe intra-sublattice terms. We firstly turn off the SOC by setting λ d1 ¼ λ d2 ¼ 0, then the system has a spin point group symmetry [37][38][39][40] generated by…”

Section: Introductionmentioning

confidence: 99%

Quantum anomalous hall effect in collinear antiferromagnetism

Guo

Liu

2023

npj Comput Mater

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The two-dimensional Quantum Hall effect with no external magnetic field is called the Quantum anomalous Hall (QAH) effect. So far, experimentally realized QAH insulators all exhibit ferromagnetic order and the QAH effect only occurs at very low temperatures. On the other hand, up to now the QAH effect in collinear antiferromagnetic (AFM) materials has never been reported and the corresponding mechanism has never been proposed. In this work, we realize the QAH effect by proposing a four-band lattice model with static AFM order, which indicates that the QAH effect can be found in AFM materials. Then, as a prototype, we demonstrate that a monolayer CrO can be switched from an AFM Weyl semimetal to an AFM QAH insulator by applying strain, based on symmetry analysis and the first-principles electronic structure calculations. Our work not only proposes a scenario to search for QAH insulators in materials, but also reveals a way to considerably increase the critical temperature of the QAH phase.

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“…Þthe intra-sublattice terms. We firstly turn off the SOC by setting λ d1 ¼ λ d2 ¼ 0, then the system has a spin point group symmetry [37][38][39][40] generated by…”

Section: Introductionmentioning

confidence: 99%

Quantum anomalous hall effect in collinear antiferromagnetism

Guo

Liu

2023

npj Comput Mater

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“…Very recently, we investigated the dwell time for an electron in an embedded MEB microstructure (EMEBM), which can be realized experimentally by constructing an FM stripe and a Schottky-metal (SM) stripe on the top and bottom of an InAs/Al x In 1−x As heterostructure respectively [30]. It is demonstrated that electron-spin polarization can be obtained by the spin-related dwell time, and the spin polarization ratio can reach optimum by depositing a proper SM stripe.…”

Section: Introductionmentioning

confidence: 99%

Manipulation of a temporal electron-spin splitter via a δ-potential in an embedded magnetic-electric-barrier microstructure

Liu¹,

Tang²,

Liu³

et al. 2021

Commun. Theor. Phys.

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We theoretically explore the manipulation of a temporal electron-spin splitter by a δ-potential in an embedded magnetic-electric-barrier microstructure (EMEBM), which is constructed by patterning a ferromagnetic stripe and a Schottky-metal stripe on the top and bottom of an InAs/Al x In1−x As heterostructure, respectively. Spin polarization of the dwell time remains, even though a δ-potential is inserted by atomic-layer doping. Both the magnitude and sign of the spin-polarized dwell time can be manipulated by changing the weight or position of the δ-potential. Thus, a structurally controllable temporal electron-spin splitter can be obtained for spintronics device applications.

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Computational Study of the Structural, Mechanical, Electronic, Half-Metallic, and Magnetic Properties of CoCrYZ (Z = In, Sn, Tl, and Pb) Quaternary Heusler Alloys

Huang

Wang

et al. 2022

J Supercond Nov Magn

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Spin-orbit-coupling induced electron-spin polarization in magnetically and electrically confined semiconductor microstructure

Cited by 5 publications

References 31 publications

Quantum anomalous hall effect in collinear antiferromagnetism

Quantum anomalous hall effect in collinear antiferromagnetism

Manipulation of a temporal electron-spin splitter via a δ-potential in an embedded magnetic-electric-barrier microstructure

Computational Study of the Structural, Mechanical, Electronic, Half-Metallic, and Magnetic Properties of CoCrYZ (Z = In, Sn, Tl, and Pb) Quaternary Heusler Alloys

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