The discovery of non-magnetic extreme magnetoresistance (XMR) materials has induced great interest because the XMR phenomenon challenges our understanding of how a magnetic field can alter electron transport in semimetals. Among XMR materials, the LaSb shows XMR and fieldinduced exotic behaviors but it seems to lack the essentials for these properties. Here, we study the magnetotransport properties and electronic structure of LaBi, isostructural to LaSb. LaBi exhibits large MR as in LaSb, which can be ascribed to the nearly compensated electron and hole with rather high mobilities. More importantly, our analysis suggests that the XMR as well as field-induced resistivity upturn and plateau observed in LaSb and LaBi can be well explained by the two-band model with the compensation situation. We present the critical conditions leading to these field-induced properties. It will contribute to the understanding of the XMR phenomenon and explore novel XMR materials.
Broad absorption, long-lived photogenerated carriers, high conductance, and high stability are all required for a light absorber toward its real application on solar cells. Inorganic-organic hybrid lead-halide materials have shown tremendous potential for applications in solar cells. This work offers a new design strategy to improve the absorption range, conductance, photoconductance, and stability of these materials. We synthesized a new photochromic lead-chloride semiconductor by incorporating a photoactive viologen zwitterion into a lead-chloride system in the coordinating mode. This semiconductor has a novel inorganic-organic hybrid structure, where 1-D semiconducting inorganic lead-chloride nanoribbons covalently bond to 1-D semiconducting organic π-aggregates. It shows high stability against light, heat, and moisture. After photoinduced electron transfer (PIET), it yields a long-lived charge-separated state with a broad absorption band covering the 200-900 nm region while increasing its conductance and photoconductance. This work is the first to modify the photoconductance of semiconductors by PIET. The observed increasing times of conductivity reached 3 orders of magnitude, which represents a record for photoswitchable semiconductors. The increasing photocurrent comes mainly from the semiconducting organic π-aggregates, which indicates a chance to improve the photocurrent by modifying the organic component. These findings contribute to the exploration of light absorbers for solar cells.
By the first-principles electronic structure calculations, we have systematically studied the electronic structures of recently discovered extremely large magnetoresistance (XMR) materials LaSb and LaBi. We find that both LaSb and LaBi are semimetals with the electron and hole carriers in perfect balance. The calculated carrier densities in the order of 10 20 cm −3 are in good agreement with the experimental values, implying long mean free time of carriers and thus high carrier mobilities. With a semiclassical two-band model, the perfect charge compensation and high carrier mobilities naturally explain (i) the XMR observed in LaSb and LaBi; (ii) the non-saturating quadratic dependence of XMR on external magnetic field; and (iii) the resistivity plateau in the turn-on temperature behavior at very low temperatures. The explanation of these features without resorting to the topological effect indicates that they should be the common characteristics of all perfectly electron-hole compensated semimetals.
In topological insulators (TIs), metallic surface conductance saturates the insulating bulk resistance with decreasing temperature, resulting in resistivity plateau at low temperatures as a transport signature originating from metallic surface modes protected by time reversal symmetry (TRS). Such characteristic has been found in several materials including Bi2Te2Se, SmB6 etc. Recently, similar behavior has been observed in metallic compound LaSb, accompanying an extremely large magetoresistance (XMR). Shubnikov-de Hass (SdH) oscillation at low temperatures further confirms the metallic behavior of plateau region under magnetic fields. LaSb [1] has been proposed by the authors as a possible topological semimetal (TSM), while negative magnetoresistance is absent at this moment. Here, high quality single crystals of NbAs2/TaAs2 with inversion symmetry have been grown and the resistivity under magnetic field is systematically investigated. Both of them exhibit metallic behavior under zero magnetic field, and a metal-to-insulator transition occurs when a nonzero magnetic field is applied, resulting in XMR (1.0×10 5 % for NbAs2 and 7.3×10 5 % for TaAs2 at 2.5 K & 14 T). With temperature decreased, a resistivity plateau emerges after the insulator-like regime and SdH oscillation has also been observed in NbAs2 and TaAs2.
By combining angle-resolved photoemission spectroscopy and quantum oscillation measurements, we performed a comprehensive investigation on the electronic structure of LaSb, which exhibits near-quadratic extremely large magnetoresistance (XMR) without any sign of saturation at magnetic fields as high as 40 T. We clearly resolve one spherical and one intersecting-ellipsoidal hole Fermi surfaces (FSs) at the Brillouin zone (BZ) center Γ and one ellipsoidal electron FS at the BZ boundary X. The hole and electron carriers calculated from the enclosed FS volumes are perfectly compensated, and the carrier compensation is unaffected by temperature. We further reveal that LaSb is topologically trivial but shares many similarities with the Weyl semimetal TaAs family in the bulk electronic structure. Based on these results, we have examined the mechanisms that have been proposed so far to explain the near-quadratic XMR in semimetals.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
hi@scite.ai
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.