Charge compensation in extremely large magnetoresistance materials LaSb and LaBi revealed by first-principles calculations

Guo, Peng‐Jie; Yang, Huan-Cheng; Zhang, Bingjing; Liu, Kai; Lu, Zhong-Yi

doi:10.1103/physrevb.93.235142

Cited by 92 publications

(131 citation statements)

References 46 publications

(93 reference statements)

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“…The macroscopic equations (48) are linear differential equations that can be solved similarly to the above case of the symmetric bands. Before presenting the general solution, we discuss two particular limiting cases, (i) the Boltzmann limit away from charge neutrality, and (ii) the fast Maxwell relaxation.…”

Section: Asymmetric Bandsmentioning

confidence: 99%

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Magnetoresistance of compensated semimetals in confined geometries

et al. 2017

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Two-component conductors -e.g., semi-metals and narrow band semiconductors -often exhibit unusually strong magnetoresistance in a wide temperature range. Suppression of the Hall voltage near charge neutrality in such systems gives rise to a strong quasiparticle drift in the direction perpendicular to the electric current and magnetic field. This drift is responsible for a strong geometrical increase of resistance even in weak magnetic fields. Combining the Boltzmann kinetic equation with sample electrostatics, we develop a microscopic theory of magnetotransport in two and three spatial dimensions. The compensated Hall effect in confined geometry is always accompanied by electronhole recombination near the sample edges and at large-scale inhomogeneities. As the result, classical edge currents may dominate the resistance in the vicinity of charge compensation. The effect leads to linear magnetoresistance in two dimensions in a broad range of parameters. In three dimensions, the magnetoresistance is normally quadratic in the field, with the linear regime restricted to rectangular samples with magnetic field directed perpendicular to the sample surface. Finally, we discuss the effects of heat flow and temperature inhomogeneities on the magnetoresistance.The theory of magnetotransport in solids 1,2 is a mature branch of condensed matter physics. Measurements of magnetoresistance and classical Hall effect are long recognized as valuable experimental tools to characterize conducting samples. Interpreting the experiments within the standard Drude theory 1,3,4 , one may extract many useful sample characteristics such as the electron mobility and charge density at the Fermi level. However, in materials with more than one type of charge carriers -e.g., semimetals and narrow band semiconductors -the situation is more complex. Indeed, already in 1928 Kapitsa observed unconventional magnetoresistance in semi-metal bismuth films 5 . More recently, interest in magnetotransport has been revived with the discovery of novel twocomponent systems including graphene 6-11 , topological insulators 12-16 , and Weyl semimetals [17][18][19][20][21][22][23][24][25][26][27] . A common feature of all such systems is the existence of the charge neutrality (or, charge compensation) point, where the concentrations of the positively and negatively charged quasiparticles (electron-like and hole-like, respectively) are equal and the system is electrically neutral.A fast growing number of experiments on novel twocomponent materials exhibit unconventional transport properties in magnetic field: (i) linear magnetoresistance (LMR) was reported in graphene and topological insulators close to charge neutrality [85][86][87] . In weak fields, resistivity of two-dimensional (2D) electron systems acquires an interaction correction 88 that is linear in the field.The extreme quantum limit of Refs. 85-87 has been realized in graphene 28 , Bi 2 Te 3 nanosheets 56 , and possibly in the novel topological material LuPdBi 57 . However, this mechanism is applicable...

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Section: Asymmetric Bandsmentioning

confidence: 99%

“…This can be seen in the solution to the equations (48), where the electric field acquires a constant component in the lateral direction…”

Section: Boltzmann Limitmentioning

confidence: 99%

Magnetoresistance of compensated semimetals in confined geometries

et al. 2017

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“…with that reported in other XMR materials [12,50]. Such a quadratic relationship that implies a non-saturating magnetoresistance can be derived from the isotropic two-band model with e-h compensation [12], which has become the most prevalent explanation for the origin of the XMR [12,27,34,36,37]. Indeed, ARPES experiments [42] Furthermore, the isotropic two-band mode cannot account for the four-fold angle dependence of the resistivity ρ(θ), as delineated in Fig.4(b).…”

Section: Iii2 Revealing the Bulk Origin Of The Shubnikov -De Haas Omentioning

confidence: 99%

“…Other mechanisms such as a magnetic-field induced metal-insulator transition (MIT) [28][29][30][31][32][33], electron-hole (e-h) compensation [12,18,27,34], and forbidden backscattering at zero field [15] have also been considered as possible origins for XMR. Recently, the rare-earth monopnictides LnX (Ln = La/Y/Nd/Ce and X = Sb/Bi) [27,[34][35][36][37][38][39][40][41][42][43][44][45][46][47][48][49] were added to the family of XMR materials. These materials, with a rock-salt cubic crystal lattice, exhibit typical hallmark XMR behavior such as power-law magnetoresistance and magnetic-field induced turn-on behavior as a function of temperature.…”

Section: Introductionmentioning

confidence: 99%

Separation of electron and hole dynamics in the semimetal LaSb

Han

Botana

et al. 2017

Phys. Rev. B

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We report investigations on the magnetotransport in LaSb, which exhibits extremely large magnetoresistance (XMR). Foremost, we demonstrate that the resistivity plateau can be explained without invoking topological protection. We then determine the Fermi surface from Shubnikov -de Haas (SdH) quantum oscillation measurements and find good agreement with the bulk Fermi pockets derived from first principle calculations. Using a semiclassical theory and the experimentally determined Fermi pocket anisotropies, we quantitatively describe the orbital magnetoresistance, including its angle dependence. We show that the origin of XMR in LaSb lies in its high mobility with diminishing Hall effect, where the high mobility leads to a strong magnetic field dependence of the longitudinal magnetoconductance. Unlike a one-band material, when a system has two or more bands (Fermi pockets) with electron and hole carriers, the added conductance arising from the Hall effect is reduced, hence revealing the latent XMR enabled by the longitudinal magnetoconductance. With diminishing Hall effect, the magnetoresistivity is simply the inverse of the longitudinal magnetoconductivity, enabling the differentiation of the electron and hole contributions to the XMR, which varies with the strength and orientation of the magnetic field. This work demonstrates a convenient way to separate the dynamics of the charge carriers and to uncover the origin of XMR in multi-band materials with anisotropic Fermi surfaces. Our approach can be readily applied to other XMR materials.

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“…Another two series of semimetals possessing quadratic XMR behavior and rich topological characteristics are the ZrSiS family [37][38][39] and LnX (Ln = La, Y, Nd, or Ce; X = Sb/Bi) series [40][41][42][43][44][45][46], whose electronic structures have been considerably studied both in theory and experiment [47][48][49][50][51][52][53]. While the band structures of the T mPn 2 series have been theoretically characterized in several work [32][33][34]54], experimental observations have not yet been reported.…”

mentioning

confidence: 99%

Observation of open-orbit Fermi surface topology in the extremely large magnetoresistance semimetalMoAs2

Lou

Zhao

et al. 2017

Phys. Rev. B

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While recent advances in band theory and sample growth have expanded the series of extremely large magnetoresistance (XMR) semimetals in transition metal dipnictides T mPn 2 (T m = Ta, Nb; Pn = P, As, Sb), the experimental study on their electronic structure and the origin of XMR is still absent. Here, using angle-resolved photoemission spectroscopy combined with first-principles calculations and magnetotransport measurements, we performed a comprehensive investigation on MoAs 2 , which is isostructural to the T mPn 2 family and also exhibits quadratic XMR. We resolve a clear band structure well agreeing with the predictions. Intriguingly, the unambiguously observed Fermi surfaces (FSs) The emergence of novel states in condensed matter is not only classified by the typical spontaneous symmetry breaking, but also by their topology, i.e., the topologically protected quantum states [1][2][3]. The discovery of such symmetry protected states of matter in two-dimensional (2D) [4-6] and three-dimensional (3D) topological insulators [7], node-line semimetals [8,9], topological crystalline insulators [10,11], and Dirac and Weyl semimetals [12][13][14][15][16][17], has attracted tremendous interests in condensed matter physics and material science. The magnetotransport behavior of these states is often unusual, such as linear transverse magnetoresistance (MR) and negative longitudinal MR in Dirac and Weyl semimetals [18][19][20][21][22][23][24], and more generally, extremely large transverse MR (XMR) in nonmagnetic semimetals [25][26][27][28][29][30].Recently, the discovery of XMR in a class of transition metal dipnictides T mPn 2 (T m = Ta, Nb; Pn = P, As, Sb) [31][32][33][34][35][36] has sparked immense interests for understanding the underlying mechanism of quadratic XMR and exploring novel quantum states arising from nontrivial topology. Another two series of semimetals possessing quadratic XMR behavior and rich topological characteristics are the ZrSiS family [37][38][39] and LnX (Ln = La, Y, Nd, or Ce; X = Sb/Bi) series [40][41][42][43][44][45][46], whose electronic structures have been considerably studied both in theory and experiment [47][48][49][50][51][52][53]. While the band structures of the T mPn 2 series have been theoretically characterized in several work [32][33][34]54], experimental observations have not yet been reported. It is widely believed that the large positive MR in semimetals is intimately related to their underlying electronic structures. Therefore, a systematic and unambiguous experimental study on the electronic structure of the T mPn 2 family is urgently demanded. Eventually, we suggest the open-orbit Fermi surface (FS) topology as another candidate mechanism to explain the XMR, in addition to the earlier proposed origins like nontrivial band topology [40], forbidden backscattering at zero field [55], and electron-hole compensation [56].In this Letter, we employ systematic angle-resolved photoemission spectroscopy (ARPES), first-principles calculations, and magnetotransport measurements o...

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Charge compensation in extremely large magnetoresistance materials LaSb and LaBi revealed by first-principles calculations

Cited by 92 publications

References 46 publications

Magnetoresistance of compensated semimetals in confined geometries

Magnetoresistance of compensated semimetals in confined geometries

Separation of electron and hole dynamics in the semimetal LaSb

Observation of open-orbit Fermi surface topology in the extremely large magnetoresistance semimetalMoAs2

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