Controllable temporal spin splitter via δ-doping in parallel double δ-magnetic-barrier nanostructure

Abstract

We theoretically investigate the control of spin-polarized dwell time by δ-doping in a parallel double δ-magnetic-barrier nanostructure, which can be realized experimentally by depositing two asymmetric ferromagnetic stripes at the top and bottom of an InAs/Al x In1−x As heterostructure, respectively. Dwell time is still spin-polarized even if a δ-doping is included inside. Both the magnitude and the sign of the spin-polarized dwell time can be manipulated by changing the weight or position of δ-doping. Therefore, this nanostructure can be employed as a structurally controllable temporal spin splitter for spintronic device applications.

Manipulation of a temporal electron-spin splitter via a δ-potential in an embedded magnetic-electric-barrier microstructure

“…On top of this work, the dwell time for an electron in another realistic MB microstructure and parallel magnetic-electric-barrier microstructure (PMEBM) were explored by Guo et al [25] and Lu et al [26], respectively. Chen et al [27,28] and Zhang et al [29] studied the dwell time of an electron in parallel and antiparallel double δ-MB microstructures, respectively. These research studies demonstrated that dwell time depends on electron spins because of the interaction between spins and structural magnetic fields in MMSM.…”