Spin–orbit torque based physical unclonable function

Finocchio, G.; Moriyama, Takahiro; Rose, Raffaele De; Siracusano, Giulio; Lanuzza, Marco; Puliafito, Vito; Chiappini, Stefano; Crupi, Felice; Zeng, Zhongming; Ono, Teruo; Carpentieri, Mario

doi:10.1063/5.0013408

Cited by 38 publications

(22 citation statements)

References 34 publications

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“…These paradigms are relatively forgiving of switching errors, poor on/off ratio, and the slow switching speed of nanomagnetic switches. Many of these constructs actually use MTJs to realize such functions as quantum annealers [38], neurons and synapses [38][39][40], probabilistic computing modules [41], image processing (for encoding pixel color -black or white -in the conductance state of an MTJ) [42], Bayesian belief networks where the parent and child nodes are implemented with MTJs [43][44][45], restricted Boltzmann machines for image classification and recognition of handwritten digits [46], integer factorization [47], invertible logic [48], computer vision [49] and physically unclonable function (PUF) generation [50]. Low barrier nanomagnets, where the thermal stability is intentionally reduced allowing the magnetization to fluctuate randomly in time are very useful for binary stochastic neurons [51].…”

Section: Discussionmentioning

confidence: 99%

Nanomagnetic Boolean Logic—The Tempered (and Realistic) Vision

Bandyopadhyay

2021

IEEE Access

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The idea of nanomagnetic Boolean logic was advanced more than two decades ago. It envisaged the use of nanomagnets with two stable magnetization orientations as the primitive binary switch for implementing logic gates and ultimately combinational/sequential circuits. Enthusiastic proclamations of how nanomagnetic logic will eclipse traditional (transistor-based) logic circuits proliferated the applied physics literature. Two decades later there is not a single viable nanomagnetic logic chip in sight, let alone one that is a commercial success. In this perspective article, I offer my reasons on why this has come to pass. I present a realistic and tempered vision of nanomagnetic logic, pointing out many misconceptions about this paradigm, flaws in some proposals that appeared in the literature, shortcomings, and likely pitfalls that might stymie progress in this field.

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Section: Discussionmentioning

confidence: 99%

Nanomagnetic Boolean Logic—The Tempered (and Realistic) Vision

Bandyopadhyay

2021

IEEE Access

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“…Among the emerging NVM technologies, STT and SOT-MRAM are also widely being explored for PUF implementations, and both field-assisted and field-free stochastic switching mechanisms were demonstrated for response bits generation. [249][250][251][252] There are few proposals based on quantum-dot cellular automata, and however, it still needs experimental investigations. [253,254] The RRAM has demonstrated higher reliability and lower BER for a wider operating range than all these technologies, significantly reducing the necessity of the additional error correction schemes, as mentioned before.…”

Section: Resistive Random Access Memory Physical Unclonable Function Implementationsmentioning

confidence: 99%

Application of Resistive Random Access Memory in Hardware Security: A Review

Rajendran

Banerjee

Chattopadhyay

et al. 2021

Adv Elect Materials

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today, with the low power embedded devices deployed for sensing, actuating and running intelligent decision-making algorithms. The advancement in wireless communication technologies such as WiFi, Bluetooth low energy, 4G-LTE, LoRaWAN and recently 5G millimeter wave communication coupled with huge boost in the computing capabilities enable these devices to exchange and process data both at the edge and cloud. This intelligent environment is now widely explored as the Internet of Things (IoT). One of the primary concerns in this development is to security. Most of the available protocols and encryption techniques for device authentication and data transfer are purely software measures, thus presenting an opportunity for a determined attacker to bypass those with higher computing power or uncover the secrets through information leakages in physical forms. Furthermore, software-driven security demands high system resources, which is unavailable in resource-constrained IoT devices, therefore necessitating robust hardware security solutions that can be integrated into those devices. On the other hand, globalization of the semiconductor industry supply chain mandates a careful auditing and trust management during the fabrication and system integration process, which can very well benefit from the inherent randomness in the manufacturing processes. Hence, hardware security research today predominantly focuses on designing security primitives that tap onto the manufacturing variations, thereby constructing primitives like true random number generator (TRNG), physical unclonable function (PUF), and cryptographic hash functions.The emerging nonvolatile memory (NVM) devices such as resistive random access memory (RRAM), spin-transfer torque magnetic random-access memory (STT-MRAM), spin-orbit torque magnetic random-access memory (SOT-MRAM), and ferroelectric field-effect transistors (FeFET) are currently explored for building beyond Von Neumann architectures. Among them, RRAM is well established today. It is a two-terminal device commonly known for its metal-insulator-metal structure. This device technology's strength is the available wide range of functional materials that can be engineered for reliable resistive switching. It includes binary transition metal oxides, 2D materials likeNowadays, advancements in the design of trusted system environments are relying on security provided by hardware-based primitives, while replacing resource-hungry software security measures. Emerging nonvolatile memory devices are promising candidates to provide the required hardware security functionalities at very low area-energy-runtime budget. Resistive random access memory (RRAM) offers high-density integration with outstanding performance among the state-of-the-art nonvolatile memory devices. The RRAM device technology is currently getting significant attention from both academia and industry for constructing beyond Von Neumann architectures. This technology's strength is its scalable two-terminal structure, the availability of wide range...

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“…In the absence of external magnetic field, in principle, there should be a perfectly 50%:50% chance for a PMA-FM (regardless of the initial magnetization state) to switch toward either the down or the up magnetization state, which makes single domain PMA SOT device a natural binary true random number generator (TRNG) ( Kim et al., 2015 ; Liu et al., 2018 ; Chen et al., 2018a ). Besides, the physical unclonable functions (PUFs) ( Gao et al., 2020 ) can also be proposed by a matrix of PMA spin-orbitronic devices with the above non-deterministic zero-field SOT switching properties ( Finocchio et al., 2019 ), which provides additional advantages over other PUF technologies in non-volatility, reconfigurability, and scalability toward the new type of keystone for maturing probabilistic computing. Further out on the roadmap with certain achieved milestones, the promise of probabilistic computing is intriguing, while it is apparently still at its infancy stage.…”

Section: Emerging Spin-orbitronic Devices Applicationsmentioning

confidence: 99%

“…proposed by a matrix of PMA spin-orbitronic devices with the above non-deterministic zero-field SOT switching properties (Finocchio et al, 2019), which provides additional advantages over other PUF technologies in non-volatility, reconfigurability, and scalability toward the new type of keystone for maturing probabilistic computing. Further out on the roadmap with certain achieved milestones, the promise of probabilistic computing is intriguing, while it is apparently still at its infancy stage.…”

Section: Accessmentioning

confidence: 99%

Prospect of Spin-Orbitronic Devices and Their Applications

et al. 2020

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Summary Science, engineering, and medicine ultimately demand fast information processing with ultra-low power consumption. The recently developed spin-orbit torque (SOT)-induced magnetization switching paradigm has been fueling opportunities for spin-orbitronic devices, i.e., enabling SOT memory and logic devices at sub-nano second and sub-picojoule regimes. Importantly, spin-orbitronic devices are intrinsic of nonvolatility, anti-radiation, unlimited endurance, excellent stability, and CMOS compatibility, toward emerging applications, e.g., processing in-memory, neuromorphic computing, probabilistic computing, and 3D magnetic random access memory. Nevertheless, the cutting-edge SOT-based devices and application remain at a premature stage owing to the lack of scalable methodology on the field-free SOT switching. Moreover, spin-orbitronics poises as an interdisciplinary field to be driven by goals of both fundamental discoveries and application innovations, to open fascinating new paths for basic research and new line of technologies. In this perspective, the specific challenges and opportunities are summarized to exert momentum on both research and eventual applications of spin-orbitronic devices.

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Spin–orbit torque based physical unclonable function

Cited by 38 publications

References 34 publications

Nanomagnetic Boolean Logic—The Tempered (and Realistic) Vision

Nanomagnetic Boolean Logic—The Tempered (and Realistic) Vision

Application of Resistive Random Access Memory in Hardware Security: A Review

Prospect of Spin-Orbitronic Devices and Their Applications

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