Static and dynamic aspects of the magnetization reversal in nanowire arrays are investigated. The arrays have been produced by electrodeposition of ferromagnetic metals ͑Fe, Co, and Ni͒ into porous anodic alumina templates, with diameters as small as 5 nm. The crystal structures of the nanowires are bcc ͑Fe͒ and fcc ͑Ni͒ and a mixture of fcc and hcp ͑Co͒, with grain sizes of a few nanometers. Magnetic properties as a function of temperature are investigated. The temperature dependence of coercivity can be understood in terms of thermal activation over an energy barrier with a 3 2 -power dependence on the field. Coercivity as a function of diameter reveals a change of the magnetization reversal mechanism from localized quasicoherent nucleation for small diameters to a localized curlinglike nucleation as the diameter exceeds a critical value determined by the exchange length. The quasicoherent limit is described by a model that yields explicitly real-structure-dependent expressions for coercivity, localization length, and activation volume.

The authors show that the magnetization of a magnetostrictive/piezoelectric multiferroic single-domain shapeanisotropic nanomagnet can be switched with very small voltages that generate strain in the magnetostrictive layer. This can be the basis of ultralow power computing and signal processing. With appropriate material choice, the energy dissipated per switching event can be reduced to ∼45 kT at room temperature for a switching delay of ∼100 ns and ∼70 kT for a switching delay of ∼10 ns, if the energy barrier separating the two stable magnetization directions is ∼32 kT . Such devices can be powered by harvesting energy exclusively from the environment without the need for a battery.

Ferromagnetic Co nanowires have been electrodeposited into self-assembled porous anodic alumina arrays. Due to their cylindrical shape, the nanowires exhibit perpendicular anisotropy. The coercivity, remanence ratio, and activation volumes of Co nanowires depend strongly on the length, diameter, and spacing of the nanowires. Both coercivity and thermal activation volume increase with increasing wire length, while for constant center-to-center spacing, coercivity decreases and thermal activation volume increases with increasing wire diameter. The behavior of the nanowires is explained qualitatively in terms of localized magnetization reversal.

Electrically controlled magnetization switching in a multiferroic heterostructure Appl. Phys. Lett. 97, 052502 (2010); 10.1063/1.3475417Effect of thermal fluctuations on switching field of deep submicron sized soft magnetic thin film Switching the magnetization of a shape-anisotropic 2-phase multiferroic nanomagnet with voltage-generated stress is known to dissipate very little energy (<1 aJ for a switching time of $0.5 ns) at 0 K temperature. Here, we show by solving the stochastic Landau-Lifshitz-Gilbert equation that switching can be carried out with $100% probability in less than 1 ns while dissipating less than 1.5 aJ at room temperature. This makes nanomagnetic logic and memory systems, predicated on stress-induced magnetic reversal, one of the most energy-efficient computing hardware extant. We also study the dependence of energy dissipation, switching delay, and the critical stress needed to switch, on the rate at which stress on the nanomagnet is ramped up or down.

A binary switch is the basic building block for information processing. The potential energy profile of a bistable binary switch is a ‘symmetric' double well. The traditional method of switching it from one state (one well) to the other is to tilt the profile towards the desired state. Here, we present a case, where no such tilting is necessary to switch successfully, even in the presence of thermal noise. This happens because of the built-in dynamics inside the switch itself. It differs from the general perception on binary switching that in a ‘symmetric' potential landscape, the switching probability is 50% in the presence of thermal noise. Our results, considering the complete three-dimensional potential landscape, demonstrate intriguing phenomena on binary switching mechanism. With experimentally feasible parameters, we theoretically demonstrate such intriguing possibility in electric field induced magnetization switching of a shape-anisotropic single-domain magnetostrictive nanomagnet with two stable states at room-temperature.

The authors show that it is possible to rotate the magnetization of a multiferroic (strain-coupled two-layer magnetostrictive-piezoelectric) nanomagnet by a large angle with a small electrostatic potential. This can implement Bennett clocking in nanomagnetic logic arrays resulting in unidirectional propagation of logic bits from one stage to another. This method of Bennett clocking is superior to using spin-transfer torque or local magnetic fields for magnetization rotation. For realistic parameters, it is shown that a potential of ~ 0.2 V applied to a multiferroic nanomagnet can rotate its magnetization by nearly 90 0 to implement Bennett clocking.

Nanomagnetic implementations of Boolean logic have attracted attention because of their nonvolatility and the potential for unprecedented overall energy-efficiency. Unfortunately, the large dissipative losses that occur when nanomagnets are switched with a magnetic field or spin-transfer-torque severely compromise the energy-efficiency. Recently, there have been experimental reports of utilizing the Spin Hall effect for switching magnets, and theoretical proposals for strain induced switching of single-domain magnetostrictive nanomagnets, that might reduce the dissipative losses significantly. Here, we experimentally demonstrate, for the first time that strain-induced switching of single-domain magnetostrictive nanomagnets of lateral dimensions ∼200 nm fabricated on a piezoelectric substrate can implement a nanomagnetic Boolean NOT gate and steer bit information unidirectionally in dipole-coupled nanomagnet chains. On the basis of the experimental results with bulk PMN-PT substrates, we estimate that the energy dissipation for logic operations in a reasonably scaled system using thin films will be a mere ∼1 aJ/bit.

Magnetic properties of Ni nanowires electrodeposited into self-assembled porous alumina arrays have been investigated. By anodizing aluminum in sulfuric acid and immersing the as-anodized template into phosphoric acid for different lengths of time, we are able to vary the diameters of the subsequently deposited nanowires between 8 and 25 nm. The coercivity measured along wire axis first increases with the wire diameter, reaches a maximum of 950 Oe near a diameter of 18 nm, and then decreases with further increase of wire diameter. The dependence of the magnetization of Ni nanowires is found to follow Bloch's law at low temperature but with the Bloch exponent decreasing from the bulk value and the Bloch constant increasing from the bulk value by an order of magnitude.