Spin disorder effect in anomalous Hall effect in MnGa

Mendonça, A P A; Varalda, J.; Schreiner, W. H.; Mosca, D. H.

doi:10.1016/j.jmmm.2017.07.066

Cited by 6 publications

(4 citation statements)

References 39 publications

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“…The negative value of coefficient a signifies that extrinsic skew scattering contribution is in opposite direction to both side-jump and intrinsic contribution due to momentum space Berry curvature, resulting a lower total AHC which is almost equal to half of the theoretically predicted intrinsic contribution. Similar features have been also observed for other SGSs [56,59], FeR-hCrGe [49] and MnGa [60].…”

Section: F Anomalous Hallsupporting

confidence: 88%

Rare observation of spin-gapless semiconducting characteristics and related band topology of quaternary Heusler alloy CoFeMnSn

Gupta¹,

Sau²,

Kumar³

et al. 2023

Preprint

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Section: F Anomalous Hallsupporting

confidence: 88%

Rare observation of spin-gapless semiconducting characteristics and related band topology of quaternary Heusler alloy CoFeMnSn

Gupta¹,

Sau²,

Kumar³

et al. 2023

Preprint

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“…Similar features have been also observed for other SGSs, 60,62 FeRhCrGe 53 and MnGa. 63 It may be noted that the substantial differences in Hall resistivity r xy (Fig. 10) and carrier concentration (Fig.…”

Section: Anomalous Hallmentioning

confidence: 93%

Spin-gapless semiconducting characteristics and related band topology of quaternary Heusler alloy CoFeMnSn

Gupta,

Sau,

Kumar

et al. 2024

J. Mater. Chem. C

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“…The anomalous Hall coefficient for bulk Mn 2 CoSn is ∼1 cm 3 C −1 at 50 K, and it decreases further with increasing temperature. It is observed that the anomalous Hall coefficient varies linearly with ρ 2 xx below 250 K indicating the existence of side-jump and intrinsic contributions [210,211].…”

Section: Mn 2 Coz Based Compoundsmentioning

confidence: 96%

Transport properties of Heusler compounds and alloys

Chatterjee

Giri

2021

J. Phys.: Condens. Matter

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Heusler compounds are a large group of intermetallic compositions with versatile material properties. In recent times, they are found to be important for their practical applications in the fields of spintronics and shape memory effect. Interestingly, their physical properties can be easily tuned by varying the valence electron concentration through proper doping and substitution. Empirical laws concerning the valence electron concentration, such as Slater–Pauling or Hume-Rothery rules are found to be useful in predicting their electronic, magnetic and structural properties quite accurately. Electrical transport measurements are simple laboratory-based techniques to gather a handful of information on the electronic properties of metals and semiconductors. The present review aimed to provide a comprehensive view of the transport in 3d and 4d transition metal-based bulk Heusler compositions. The main emphasis is given on resistivity, magnetoresistance, Hall effect, thermopower and spin-dependent transport in spintronics devices. The review primarily focuses on magnetic Heusler compounds and alloys, albeit it also addresses several non-magnetic materials showing superconductivity or large thermopower.

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Spin disorder effect in anomalous Hall effect in MnGa

Cited by 6 publications

References 39 publications

Rare observation of spin-gapless semiconducting characteristics and related band topology of quaternary Heusler alloy CoFeMnSn

Rare observation of spin-gapless semiconducting characteristics and related band topology of quaternary Heusler alloy CoFeMnSn

Spin-gapless semiconducting characteristics and related band topology of quaternary Heusler alloy CoFeMnSn

Transport properties of Heusler compounds and alloys

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