Spin-gapless semiconducting characteristics and related band topology of quaternary Heusler alloy CoFeMnSn

Gupta, Shuvankar; Sau, Jyotirmoy; Kumar, Manoranjan; Mazumdar, Chandan

doi:10.1039/d3tc03481j

J. Mater. Chem. C

2024

DOI: 10.1039/d3tc03481j

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Spin-gapless semiconducting characteristics and related band topology of quaternary Heusler alloy CoFeMnSn

Shuvankar Gupta,

Jyotirmoy Sau,

Manoranjan Kumar

et al.

Abstract: This study presents the synthesis, structural analysis, magnetic behavior, transport properties, and electronic characteristics of a novel spin-gapless semiconductor compound CoFeMnSn within the quaternary Heusler alloy.

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Spin-gapless semiconducting characteristics and related band topology of quaternary Heusler alloy CoFeMnSn

Abstract: This study presents the synthesis, structural analysis, magnetic behavior, transport properties, and electronic characteristics of a novel spin-gapless semiconductor compound CoFeMnSn within the quaternary Heusler alloy.

Cited by 6 publications

References 80 publications

Alkali-based half metals as sustainable materials for spin electronics and energy harvesting application — Materials computation

Alkali-based half metals as sustainable materials for spin electronics and energy harvesting application — Materials computation

Structural, magnetic and transport properties of FeRuVZ (Z = Si, Ge) Heusler alloys: Experiment and theory

The p-type (Mn1.5Co0.5)VAl Heusler alloy with high Curie temperature for spintronics device applications

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