Spin-coated silver nanocomposite resistive switching devices

Inkjet assisted fabrication of planar biocompatible memristors

“…Furthermore, the inkjet bioprinting is rapidly developing nowadays, 54,55 thus enabling precise positioning and arrangement of biological and inorganic elements on the substrate. The nano-and microfabrication methods based on physical (FIB) 56 or chemical (mask lithography) 28,29 treatment provide better reproducibility, 52 though they cannot be considered for conducting in situ experiments with biological cells or tissues. In these cases, the combination of AFM and inkjet patterning shall be a justied choice.…”

“…Recently, several studies addressed the planar conguration of memristive elements. [28][29][30] These elements were technologically performed using photolithography, leaving gaps between the pairs of metallic electrodes and lling them with a memristive composite. The gaps widths were reported to range from 10 mm 28,29 to 50-200 mm.…”

“…[28][29][30] These elements were technologically performed using photolithography, leaving gaps between the pairs of metallic electrodes and lling them with a memristive composite. The gaps widths were reported to range from 10 mm 28,29 to 50-200 mm. 30 To achieve the memristive effect between so far distant electrodes, the authors used dielectric nanocomposite materials with silver nanoparticles.…”

Flash memory devices and bistable nonvolatile resistance switching properties based on PFO doping with ZnO

“…By Soxhlet extraction for two days, the extractant was acetone. The nal product was dried for 48 h in a vacuum and underwent characterization analysis under 1 H-NMR, 13 C-NMR and FT-IR spectroscopy.…”

Improved Resistive Memory Based on ZnO–Graphene Hybrids through Redox Process of Graphene Quantum Dots

“…Compared with conventional vacuum deposition processes, solution‐processed nonvolatile memory devices have unique advantages such as low cost, low‐temperature compatible processing, and facile fabrication . In this work, ultra‐low power consumption and highly uniform switching parameters are achieved in an RRAM device based on solution‐processed zinc oxide–graphene quantum dot (ZnO–GQD) hybrids, and a model explaining the excellent switching properties of the device is proposed.…”