Spectroscopy of Post-Transition Metal Ions

Boulon, G.

doi:10.1007/978-1-4613-0899-7_8

Cited by 11 publications

(10 citation statements)

References 53 publications

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“…At higher temperatures, the decay time decreases due to the luminescence thermal quenching. Analogous τ SC (T) dependences were obtained, e.g., for the triplet emission of Ga + -and In + -doped alkali halides (see, e.g., [132]) due to a small spin-orbit interaction energy characteristic for free Ga + and In + ions (ξ ≈ 0.2-0.3 eV, see, e.g., [4]). Indeed, D = 0.33-0.67 meV was obtained in [132] for Ga + centers and D = 2.15-3.04 meV, for In + centers.…”

Section: Characteristics Of the Visible Luminescencesupporting

confidence: 59%

“…As evident from Table 1, the triplet RES responsible for the UV emission is characterized by very large (~10 2 meV) energy distance D between the metastable and emitting levels of the triplet RES which can be explained by extremely large spin-orbit interaction energy characteristic for a free Bi 3+ ion (ξ = 2.102 eV [4]). Therefore, the higher-energy (UV) emission of all the investigated materials can surely be ascribed to the electronic transitions from the triplet RES of Bi 3+ corresponding to the 3 P 1,0 → 1 S 0 transitions of a free Bi 3+ ion.…”

Section: Dynamics Of the Triplet Excited State Of Bi 3+ Centersmentioning

confidence: 96%

“…The VIS emission was interpreted as the luminescence of an exciton localized around a Bi 3+ -related center. Indeed, since a free Bi 3+ ion has the largest spin-orbit interaction energy among all the other ns 2 ions (ξ = 2.102 eV [4]), a very small energy distance (D = 0.34-5.7 meV, see Table 2) between the metastable and emitting levels of the triplet RES responsible for the VIS emission can only be explained by the exciton-like origin of this emission. In addition to the small spin-orbit interaction energy, a strong exciton-phonon interaction is also characteristic for excitons which explains the large Stokes shift and FWHM of the VIS emission.…”

Section: On the Origin Of The Visible Luminescencementioning

confidence: 99%

“…Luminescence of various Bi 3+ -doped materials (alkali halides; alkaline-earth oxides, sulfates and phosphates; tungstates; garnets; perovskites; silicates; borates; vanadates; niobates, etc.) was systematically investigated starting from the 1960s (see, e.g., review papers [1][2][3][4][5][6][7][8][9][10][11] and references therein). Bi 3+ -doped complex oxides, where a trivalent Bi 3+ ion substitutes for a trivalent rare-earth ion, became the subject of special interest and extensive research due to their possible applications as scintillator and phosphor materials.…”

Section: Introductionmentioning

confidence: 99%

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Luminescence Spectroscopy and Origin of Luminescence Centers in Bi-Doped Materials

et al. 2020

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Bi-doped compounds recently became the subject of an extensive research due to their possible applications as scintillator and phosphor materials. The oxides co-doped with Bi3+ and trivalent rare-earth ions were proposed as prospective phosphors for white light-emitting diodes and quantum cutting down-converting materials applicable for enhancement of silicon solar cells. Luminescence characteristics of different Bi3+-doped materials were found to be strongly different and ascribed to electronic transitions from the excited levels of a Bi3+ ion to its ground state, charge-transfer transitions, Bi3+ dimers or clusters, radiative decay of Bi3+-related localized or trapped excitons, etc. In this review, we compare the characteristics of the Bi3+-related luminescence in various compounds; discuss the possible origin of the corresponding luminescence centers as well as the processes resulting in their luminescence; consider the phenomenological models proposed to describe the excited-state dynamics of the Bi3+-related centers and determine the structure and parameters of their relaxed excited states; address an influence of different interactions (e.g., spin-orbit, electron-phonon, hyperfine) as well as the Bi3+ ion charge and volume compensating defects on the luminescence characteristics. The Bi-related luminescence arising from lower charge states (namely, Bi2+, Bi+, Bi0) is also reviewed.

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Section: Characteristics Of the Visible Luminescencesupporting

confidence: 59%

Section: Dynamics Of the Triplet Excited State Of Bi 3+ Centersmentioning

confidence: 96%

Section: On the Origin Of The Visible Luminescencementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Luminescence Spectroscopy and Origin of Luminescence Centers in Bi-Doped Materials

et al. 2020

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“…The Bi 3+ centre also started to be studied more systematically in the 1970s and 1980s. Mainly oxide-based materials were adopted as the host due to better availability of trivalent sites, which were suitable for Bi 3+ doping; see the reviews [3,4]. With respect to Tl + and Pb 2+ , more reports, dealing with the luminescence of Bi 3+ centres, appear in the literature in recent years.…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence of Bi³⁺in Y₃Ga₅O₁₂single-crystal host

Nikl

Novoselov

Mihóková

et al. 2005

J. Phys.: Condens. Matter

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Photoluminescence spectra and decay kinetics within 10-350 K were measured in the Bi-doped Y 3 Ga 5 O 12 single crystal prepared by the micro-pullingdown technique. Temperature dependences of the decay times and the integrated emission intensities obtained from the experiment were simulated using a phenomenological two-excited-state-level model. The model provided quantitative parameters of the involved excited state levels of the Bi 3+ luminescence centre in this host. The results are discussed in the light of already published data obtained for other Bi-doped compounds. The influence of the defects and structural irregularities of the host on the Bi 3+ emission characteristics is discussed as well.

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Luminescence and photo‐thermally stimulated defect‐creation processes in Bi³⁺‐doped single crystals of lead tungstate

Buryi

Boháček

Chernenko

et al. 2016

Physica Status Solidi (b)

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For the first time, photoluminescence of PbWO 4 :Bi crystals with different bismuth contents is studied by the time-resolved spectroscopy methods at 4.2-300 K. Photo-thermally stimulated processes of electron and hole centers creation under selective UV irradiation of the crystal in the 3-5 eV energy range and the 4.2-200 K temperature range are clarified, and the optically created electron and hole centers are identified by the thermally stimulated luminescence and electron spin resonance methods. The 2.2 eV emission of PbWO 4 :Bi crystals, excited in the Bi 3þ -related absorption band overlapped with the exciton absorption band, is shown to be of an excitonic origin and is suggested to arise from the excitons of two types localized around two different Bi 3þ -related centers.No emission, arising from the electron transitions between the energy levels of Bi 3þ ions, is observed. Photoexcitation of PbWO 4 :Bi crystals in the Bi 3þ -related absorption region results also in the creation of electron and hole centers. Three new paramagnetic centers are identified: (i) two holes trapped at two regular oxygen ions located close to a Bi 3þ ion and a lead vacancy V Pb (the {2O -À Bi 3þ À V Pb }-type hole centers); (ii) Bi 4þ centers; and (iii) the O À -type hole centers. The concentration of single (non-compensated) oxygen and lead vacancies as traps for electrons and holes, respectively, is found to be small. The processes resulting in the appearance of the Bi 3þ -related localized exciton emission and in the creation of Bi-related electron and hole centers are discussed.

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Spectroscopy of Post-Transition Metal Ions

Cited by 11 publications

References 53 publications

Luminescence Spectroscopy and Origin of Luminescence Centers in Bi-Doped Materials

Luminescence Spectroscopy and Origin of Luminescence Centers in Bi-Doped Materials

Photoluminescence of Bi³⁺in Y₃Ga₅O₁₂single-crystal host

Luminescence and photo‐thermally stimulated defect‐creation processes in Bi³⁺‐doped single crystals of lead tungstate

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Spectroscopy of Post-Transition Metal Ions

Cited by 11 publications

References 53 publications

Luminescence Spectroscopy and Origin of Luminescence Centers in Bi-Doped Materials

Luminescence Spectroscopy and Origin of Luminescence Centers in Bi-Doped Materials

Photoluminescence of Bi3+in Y3Ga5O12single-crystal host

Luminescence and photo‐thermally stimulated defect‐creation processes in Bi3+‐doped single crystals of lead tungstate

Contact Info

Product

Resources

About

Photoluminescence of Bi³⁺in Y₃Ga₅O₁₂single-crystal host

Luminescence and photo‐thermally stimulated defect‐creation processes in Bi³⁺‐doped single crystals of lead tungstate