Photoluminescence of Bi³⁺in Y₃Ga₅O₁₂single-crystal host

Abstract

Photoluminescence spectra and decay kinetics within 10-350 K were measured in the Bi-doped Y 3 Ga 5 O 12 single crystal prepared by the micro-pullingdown technique. Temperature dependences of the decay times and the integrated emission intensities obtained from the experiment were simulated using a phenomenological two-excited-state-level model. The model provided quantitative parameters of the involved excited state levels of the Bi 3+ luminescence centre in this host. The results are discussed in the light of already published data obtained for other Bi-doped compounds. The influence of the defects and structural irregularities of the host on the Bi 3+ emission characteristics is discussed as well.

Photoluminescence of Lu3Al5O12:Bi and Y3Al5O12:Bi single crystalline films

“…Comparison of the data obtained for YAG:Bi in the present paper and for LuAG:Bi by Babin et al (2009) with those reported for the UV emission of Bi 3þ centers in other hosts (see, e.g., Wolfert and Blasse, 1985;Donker et al, 1989;Aceves et al, 1996;Nikl et al, 2005) allows us to conclude that the 5.9 eV and 4.57 eV excitation bands arise from the electronic transitions to the singlet and The intensity of the UV band is decreased 10 times. The spectra are distorted around 2.7 eV due to the contamination of the samples with Ce 3þ ions and the reabsorption of the VIS emission in the z2.7 eV absorption band of Ce 3þ centers.…”

“…However, the luminescence of Bi 3þ centers in garnets has been studied in only a few papers. In the emission spectrum of Y 3 Ga 5 O 12 :Bi (Nikl et al, 2005;Setlur and Srivastava, 2006), Gd 3 Ga 5 O 12 :Bi (Setlur and Srivastava, 2006), Y 3 Al 5 O 12 :Bi (Setlur and Srivastava, 2006;Zorenko et al, 2007Zorenko et al, , 2009, and Lu 3 Al 5 O 12 :Bi (Setlur and Srivastava, 2006;Zorenko et al, 2009), two bands were observed, located in the ultraviolet and the visible spectral range. The ultraviolet emission was ascribed to the radiative decay of the triplet excited state of Bi 3þ .…”

“…The ultraviolet emission was ascribed to the radiative decay of the triplet excited state of Bi 3þ . Two components of this emission were ascribed to the electronic transitions, corresponding to the 3 P 1 / 1 S 0 and 3 P 0 / 1 S 0 transitions in a free Bi 3þ ion (Nikl et al, 2005). The origin of the visible emission is still not clear.…”

“…Bi 3þ -doped rare-earth aluminate and gallate garnets, where a Bi 3þ ion substitutes a trivalent rare-earth ion, can be considered as prospective materials for scintillators due to an intense and fast Bi 3þ -related emission (Nikl et al, 2005;Zorenko et al, 2007Zorenko et al, , 2009). However, the luminescence of Bi 3þ centers in garnets has been studied in only a few papers.…”

Origin of Bi3+‐related luminescence centres in Lu3Al5O12:Bi and Y3Al5O12:Bi single crystalline films and the structure of their relaxed excited states

“…Bi 3+ -doped rare-earth aluminate and gallate garnets, where a Bi 3+ ion substitutes for a trivalent rare-earth ion, can be considered as perspective materials for scintillators due to an intense and fast Bi 3+ -related emission [1][2][3]. In SCFs of Bi 3+ -doped aluminum garnets prepared by the liquid phase epitaxy (LPE) method, a large and variable concentration of Bi 3+ ions can be achieved [3].…”