Bismuth‐Activated Persistent Phosphors

Abstract

Figure 13. Demonstration of X-ray imaging using thin films prepared from a) NaYGeO 4 :0.004Bi 3+ and b) NaYGeO 4 :0.003Bi 3+ ,0.008Tb 3+ . c) The relationship between X-ray imaging resolution and X-ray irradiation dose of NaYGeO 4 :0.003Bi 3+ ,0.008Tb 3+ phosphor film. Reproduced with permission. [46]

Near‐Infrared Persistent Phosphor‐Mediated Smart Sensing Light‐Emitting Diodes for Advanced Driver Assistance Systems

“…When stimulated at a higher temperature, the shallower traps were instantly bleached owing to the rising thermal energy; however, only deeper fractions of the traps were filled with a quasi‐continuous trap depth distribution. [ 25 ] Figure 3e shows the shift in the TL maximum peak from low to high temperature, demonstrating the quasi‐continuous trap depth distribution in SrAl 12 O 19 :Fe 3+ , Mg 2+ , Ti 4+ . Thus, the trap depths (Figure S2, Supporting Information ) were discussed in detail using the initial rise method, which is independent of the order of kinetics involved in the trapping and releasing processes.…”

“…[ 21,24 ] Upon excitation at 267 nm UV light, a broad NIR emission centered at 811 nm was observed owing to the typical 4 T 1 (4G) → 6 A 1 (6S) transition of Fe 3+ . [ 25 ] Figure 3b shows the NIR afterglow curves of the SrAl 12 O 19 :Fe 3+ , SrAl 12 O 19 :Fe 3+ , Mg 2+ , SrAl 12 O 19 :Fe 3+ , Ti 4+ , and SrAl 12 O 19 :Fe 3+ , Mg 2+ , Ti 4+ samples. The fitted decay curves are shown in Figure S1, Supporting Information.…”

“…6 A 1 (6S) transition of Fe 3þ . [25] Figure 3b PPs, a series of TL curves were obtained by varying the duration of UV irradiation and thermal cleaning temperature. Figure 3d displays the TL curves of SrAl 12 O 19 :Fe 3þ , Mg 2þ , Ti 4þ at various delay times after stopping the UV light irradiation.…”

Bismuth Vacancy-Induced Enhancement of Luminescence Intensity and Irradiation Resistance for Bi4Ge3O12

“…An emission peak at 455 nm for Bi x Ge 3 O 12 can be ascribed to the 3 P 1 → 1 S 0 transition of Bi 3+ (Figure 2b). 19 This indicates that Bi 3+ ions play the role of emission center. Moreover, the reduction of Bi content enhanced the PL intensity compared with vacancy-free Bi 4 Ge 3 O 12 (Figure 2c).…”

“…Figure a shows the excitation (PLE) spectrum of Bi x Ge 3 O 12 , giving a band centered at 275 nm due to Bi 3+ : 1 S 0 → 3 P 1 . An emission peak at 455 nm for Bi x Ge 3 O 12 can be ascribed to the 3 P 1 → 1 S 0 transition of Bi 3+ (Figure b) . This indicates that Bi 3+ ions play the role of emission center.…”