Luminescence and photo‐thermally stimulated defect‐creation processes in Bi<sup>3+</sup>‐doped single crystals of lead tungstate

Buryi, M.; Boháček, P.; Chernenko, Kirill; Krasnikov, А.; Laguta, V. V.; Mihóková, E.; Nikl, M.; Zazubovich, S.

doi:10.1002/pssb.201552697

Cited by 25 publications

(20 citation statements)

References 102 publications

(255 reference statements)

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“…In this case, besides the radiative electron-hole recombination, resulting in the appearance of the Bi 3+ -related exciton-like luminescence, the electron Bi 2+ centers and the self-trapped holes can also be optically created. These centers were indeed detected in EPR [73,193].…”

Section: On Possible Mechanisms Of Processes Responsible For the Vis mentioning

confidence: 72%

“…As evident from Table 2, the VIS emission is characterized not only by the large Stokes shift and FWHM. In all the works [7,9,[16][17][18]21,69,[72][73][74][75][76][77][78]83,93,95] where the low-temperature luminescence decay kinetics was investigated, also a very small (~1 meV) energy distance D between the two lowest excited levels was reported.…”

Section: Dynamics Of the Bi 3+ -Related Exciton-like Statesmentioning

confidence: 99%

“…Detailed investigations of the VIS emission by the time-resolved spectroscopy methods in a wide temperature range (down to 0.4 K) and determination of the RES parameters carried out in [7,9,13,[16][17][18]21,[72][73][74][75][76][77][78]83,93,95,99,156] allow us to make a justified conclusion on the exciton-like origin of the emission in the considered Bi 3+ -doped compounds. The VIS emission was interpreted as the luminescence of an exciton localized around a Bi 3+ -related center.…”

Section: On the Origin Of The Visible Luminescencementioning

confidence: 99%

“…In more detail, this process was considered for PbWO 4 :Bi in Ref. [73] (see Appendix A). In this case, besides the radiative electron-hole recombination, resulting in the appearance of the Bi 3+ -related exciton-like luminescence, the electron Bi 2+ centers and the self-trapped holes can also be optically created.…”

Section: On Possible Mechanisms Of Processes Responsible For the Vis mentioning

confidence: 99%

“…However, the absence of the UV luminescence of single Bi 3+ centers in Li 2 BaP 2 O 7 :Bi (as well as in many other Bi 3+ -doped compounds, see, e.g., [12,58,[72][73][74][75][76][77]99,102,104,109]) is most probably caused by the location of the lowest-energy relaxed excited level of Bi 3+ inside CB. The same can also be true for the VIS emission ascribed in literature to Bi 3+ dimers as well as for any other emission.…”

Section: Visible Luminescencementioning

confidence: 99%

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Luminescence Spectroscopy and Origin of Luminescence Centers in Bi-Doped Materials

et al. 2020

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Bi-doped compounds recently became the subject of an extensive research due to their possible applications as scintillator and phosphor materials. The oxides co-doped with Bi3+ and trivalent rare-earth ions were proposed as prospective phosphors for white light-emitting diodes and quantum cutting down-converting materials applicable for enhancement of silicon solar cells. Luminescence characteristics of different Bi3+-doped materials were found to be strongly different and ascribed to electronic transitions from the excited levels of a Bi3+ ion to its ground state, charge-transfer transitions, Bi3+ dimers or clusters, radiative decay of Bi3+-related localized or trapped excitons, etc. In this review, we compare the characteristics of the Bi3+-related luminescence in various compounds; discuss the possible origin of the corresponding luminescence centers as well as the processes resulting in their luminescence; consider the phenomenological models proposed to describe the excited-state dynamics of the Bi3+-related centers and determine the structure and parameters of their relaxed excited states; address an influence of different interactions (e.g., spin-orbit, electron-phonon, hyperfine) as well as the Bi3+ ion charge and volume compensating defects on the luminescence characteristics. The Bi-related luminescence arising from lower charge states (namely, Bi2+, Bi+, Bi0) is also reviewed.

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Section: On Possible Mechanisms Of Processes Responsible For the Vis mentioning

confidence: 72%

Section: Dynamics Of the Bi 3+ -Related Exciton-like Statesmentioning

confidence: 99%

Section: On the Origin Of The Visible Luminescencementioning

confidence: 99%

Section: On Possible Mechanisms Of Processes Responsible For the Vis mentioning

confidence: 99%

Section: Visible Luminescencementioning

confidence: 99%

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Luminescence Spectroscopy and Origin of Luminescence Centers in Bi-Doped Materials

et al. 2020

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Photostimulated Defect Creation Processes in the Undoped and Bi³⁺‐Doped Ca₃Ga₂Ge₃O₁₂ Garnets

Krasnikov

Цюмра

Vasylechko

et al. 2021

Physica Status Solidi (b)

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Bismuth-doped compounds, due to their excellent luminescence performance and tunable luminescence properties, attract increasing attention as promising materials for applications in different fields, e.g., in fiber lasers, broadband optical amplifiers, bioimaging, scintillators, light-emitting diodes, and solar cells (see, e.g., refs. [1-12] and references therein). Among them, the materials where the trivalent Bi 3þ ion substitutes for a trivalent rare-earth ion were investigated in most detail (see, e.g., review articles [1][2][3][4]13] and references therein). However, due to the relatively high cost and limited resources of rare earths, their high supply disruption risk, and the environmental issues related to their mining and refinement, these materials should be replaced by highly effective rare-earth-free compounds. Recently, these problems were analyzed in detail, and alternative materials suitable for various lighting applications were considered (see, e.g., Pavel et al. and Ricci [14,15] and references therein).In this work, the Ca 3 Ga 2 Ge 3 O 12 :Bi garnet was chosen for investigation as one of the rare-earth-free compounds. In the crystal lattice of Ca 3 Ga 2 Ge 3 O 12 , the Ca 2þ , Ga 3þ , and Ge 4þ ions are located in the dodecahedral, octahedral, and tetrahedral sites and surrounded by eight, six, or four oxygen ions, respectively. [16,17] The first detailed investigation of undoped and Bi 3þ -doped Ca 3 Ga 2 Ge 3 O 12 garnets by the X-ray diffraction and time-resolved photoluminescence spectroscopy methods was conducted in our recent work. [18] It was found that in the luminescence spectrum of the undoped Ca 3 Ga 2 Ge 3 O 12 sample, the main complex emission band is peaking at 2.74 eV and excited around 5.04 eV and in the band-to-band absorption region (with E exc ≥ 5.5 eV). It was shown that this emission is not of exciton-like origin and suggested that the 5.04 eV excitation results in the charge-transfer transitions from the oxygen O 2À levels at the top of the valence band (VB) to the ground state of intrinsic defects.In the luminescence spectrum of Ca 3 Ga 2 Ge 3 O 12 :Bi, the Bi 3þrelated ultraviolet (UV) and visible (vis) emission bands were observed under excitation in the complex %4.45 eV absorption band of Bi 3þ ions corresponding to the 1 S 0 ! 3 P 1 electron transitions of a free Bi 3þ ion. From the temperature dependences of the luminescence decay kinetics, the origin, structure, and parameters of the relaxed excited states (RESs) corresponding to each emission band were determined. It was concluded that the UV and vis emissions are of different origin. Four UV emission bands of Ca 3 Ga 2 Ge 3 O 12 :Bi (located around 3.9 and 3.06 eV) were shown to arise from the triplet RES of Bi 3þ ions having different nearest surroundings; i.e., these bands correspond to the 3 P 1,0 ! 1 S 0 transitions of a free Bi 3þ ion. Indeed, the spin-orbit splitting energies of their triplet RES are rather large and vary from 56 to 100 meV, which is characteristic for the triplet

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Vanadate and tungstate based phosphors for thermo luminescence dosimetry

Mehare

Nakhate²,

Dhoble

et al. 2023

Phosphor Handbook

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Luminescence and photo‐thermally stimulated defect‐creation processes in Bi³⁺‐doped single crystals of lead tungstate

Cited by 25 publications

References 102 publications

Luminescence Spectroscopy and Origin of Luminescence Centers in Bi-Doped Materials

Luminescence Spectroscopy and Origin of Luminescence Centers in Bi-Doped Materials

Photostimulated Defect Creation Processes in the Undoped and Bi³⁺‐Doped Ca₃Ga₂Ge₃O₁₂ Garnets

Vanadate and tungstate based phosphors for thermo luminescence dosimetry

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Luminescence and photo‐thermally stimulated defect‐creation processes in Bi3+‐doped single crystals of lead tungstate

Cited by 25 publications

References 102 publications

Luminescence Spectroscopy and Origin of Luminescence Centers in Bi-Doped Materials

Luminescence Spectroscopy and Origin of Luminescence Centers in Bi-Doped Materials

Photostimulated Defect Creation Processes in the Undoped and Bi3+‐Doped Ca3Ga2Ge3O12 Garnets

Vanadate and tungstate based phosphors for thermo luminescence dosimetry

Contact Info

Product

Resources

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Luminescence and photo‐thermally stimulated defect‐creation processes in Bi³⁺‐doped single crystals of lead tungstate

Photostimulated Defect Creation Processes in the Undoped and Bi³⁺‐Doped Ca₃Ga₂Ge₃O₁₂ Garnets