Spectroscopy of CsPbBr3 quantum dots in CsBr:Pb crystals

Aceves, R.; Babin, V.; Barboza-Flores, M.; Fabeni, P.; Maaroos, A.; Nikl, M.; Nitsch, K.; Pazzi, G.P.; Río-Salas, Rafael Del; Силдос, И.; Zazubovich, N.; Zazubovich, S.

doi:10.1016/s0022-2313(01)00175-2

Cited by 46 publications

(49 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The results obtained suggest that aggregate centers of the CsEuBr 3 nanocrystal type are formed in crystals of the system CsBr-Eu 2 O 3 in a narrow activator concentration range (0.010-0.050 mole %), in contrast to CsPbBr 3 nanocrystals in CsBr:PbBr 2 (0.005-1.800 mole %) crystals [7]. Probably such conditions for the formation of aggregate centers in CsBr:Eu 2+ single crystals is the result of the characteristic features of the phase diagram for the system CsBr-Eu 2 O 3 , which is not available at this time.…”

mentioning

confidence: 86%

“…Later the optical properties of similarly synthesized CsPbBr 3 nanocrystals in a CsBr:Pb matrix were studied [7]. In particular, it has been shown that aggregate centers in the form of CsPbBr 3 nanocrystals are formed when CsBr is doped from the melt over a broad PbBr 2 concentration range (0.005-1.800 mole %).…”

mentioning

confidence: 99%

“…However, the question concerning how the concentration of aggregate luminescence centers in CsBr:Eu 2+ crystals changes for activator concentrations <0.1 mole % has remained unanswered. Therefore the aim of this work was to establish the characteristic features of formation of aggregate luminescence centers in CsBr single crystals when they are doped from the melt with Eu 2 O 3 impurity in the concentration range 0.01-0.10 mole %, correlating with the region of formation of CsPbBr 3 aggregate luminescence centers in CsBr:PbBr 2 single crystals [7]. The impurity Eu 2 O 3 was chosen to determine the possible effect of an oxygen impurity on processes of formation of aggregate luminescence centers.…”

mentioning

confidence: 99%

See 2 more Smart Citations

Luminescence of aggregate centers in CsBr:Eu2+ single crystals

et al. 2006

View full text Add to dashboard Cite

We have used the Bridgman method to grow CsBr:Eu 2+ single crystals, adding an activator to the mix in the form of Eu 2 O 3 in amounts of 0.0125, 0.0250, and 0.0500 mole %. At T = 300 K, we studied the absorption spectra, the photoluminescence (PL) spectra, and the photostimulated luminescence (PSL) spectra of the grown crystals. We have established that the structure of the photoluminescence and photostimulated luminescence centers in crystals grown from the CsBr:Eu 2 O 3 mix includes isolated dipole centers Eu 2+ -V Cs , emitting in bands with maxima at 432 nm and 455 nm respectively, and in crystals grown at activator concentrations of 0.025 and 0.050 mole % they also include aggregate centers (AC) based on CsEuBr 3 nanocrystals with emission bands at 515 m and 523 nm. We have shown that the maximum concentration of aggregate centers of the CsEuBr 3 nanocrystal type in CsBr:Eu 2+ crystals is achieved for an activator content in the mix within the range 0.01-0.05 mole %.Introduction. CsBr:Eu 2+ crystals, having intense photostimulated luminescence (PSL), are promising storage phosphors for visualization of x-ray images [1,2]. The optical and luminescent properties of CsBr:Eu 2+ crystals synthesized by different technologies have been studied in [1][2][3][4][5]. It has been shown that regardless of the chemical composition of the activator (EuBr 2 , EuBr 3 ⋅8.9 H 2 O, EuOBr, Eu met ) in the CsBr mix, the europium ions are incorporated only in the divalent state into single crystals grown from the melt or into powder samples obtained by solid-phase synthesis. Another feature of incorporation of Eu 2+ ions into a CsBr crystal lattice is both formation of Eu 2+ -V Cs isolated dipole centers (IDC) [3] and, under certain conditions (activator concentrations and annealing temperatures), formation of aggregate centers (AC) of the CsEuBr 3 nanocrystal type [4,5].Upon excitation of CsBr:Eu 2+ crystals by UV light from the absorption region of Eu 2+ ions (λ max = 250 nm and 350 nm), isolated dipole centers and aggregate centers luminesce in bands with maxima at 434 nm and 523 nm. Typically the concentration of aggregate centers in CsBr:Eu 2+ crystals depends both on the activator concentration in the mix and on the crystal annealing temperature [4,5]. For annealing temperatures of 180 o C-200 o C, the concentration of aggregate centers in CsBr:Eu +2 crystals increases; while for T ≥ 250 o C degradation of the aggregate centers occurs [5]. This result correlates well with the data in [2] on the effect of annealing temperature for CsBr:Eu 2+ powders on the intensity of their photostimulated luminescence. According to [2], annealing of powders at T = 180 o C-200 o C doubles the intensity of photostimulated luminescence and thus improves the storage properties of the phosphor. Obviously such a result is due to formation of aggregate luminescence centers in the CsBr:Eu 2+ crystals.Aggregate luminescence centers in the form of CsPbCl 3 nanocrystals in a CsCl:Pb matrix were identified and studied for the first time in [6]. Later...

show abstract

mentioning

confidence: 86%

mentioning

confidence: 99%

mentioning

confidence: 99%

See 1 more Smart Citation

Luminescence of aggregate centers in CsBr:Eu2+ single crystals

et al. 2006

View full text Add to dashboard Cite

show abstract

“…The factor that could cause this shift is hydrostatic pressure that affects the microcrystals in the CsBr matrix. Since Sn 2+ and Pb 2+ ions are isoelectronic, we suppose that the mechanisms for formation of CsSnBr 3 microcrystals and isostructural CsPbBr 3 nanocrystals in the CsBr matrix are analogous [14]. Then the ribs of the elementary cell of CsSnBr 3 crystal along a and b directions are parallel to the elementary cell diagonals of CsBr (see Fig.…”

Section: +mentioning

confidence: 99%

Luminescence properties of Sn-containing microcrystals in CsBr:Sn crystal

Savchyn¹,

Myagkota²,

Stryganyuk³

et al. 2008

Ukr. J. Phys. Opt.

View full text Add to dashboard Cite

show abstract

“…In the last several years many interesting studies have been carried out on a new type of microcrystals, i.e., CsPbX 3 (X ¼ Cl, Br) microcrystals dispersed in crystal matrices, with the expectation of their possible application in fast scintillators and opto-electronic devices taking advantage of a very fast and strong free-exciton luminescence of the source compounds. The studies are based on the measurements of photoluminescence of the microcrystals thermally grown in Pb 2þ -doped CsX [1][2][3][4][5][6][7][8][9][10][11][12][13] or CsSrX 3 [14] crystals and Cs þ -doped PbX 2 [12,15,16] crystals, and deal with quantum size effects on excitons, such as confinement-induced blue shifts of exciton energy and confinement-induced changes in the decay kinetics of excitons, or aim at elucidation of growth kinetics of the microcrystals. The decay-kinetics studies reveal that the radiative decay time of the free excitons in the microcrystals is further shortened by the effect of confinement on the excitons, suggesting that the inherently strong free-exciton luminescence for CsPbX 3 can be further enhanced in intensity by the confinement effect.…”

Section: Introductionmentioning

confidence: 99%

Extremely photo-luminescent microcrystalline CsPbX3 (X=Cl, Br) films obtained by amorphous-to-crystalline transformation

Kondo

Nakagawa

Saito

et al. 2004

Current Applied Physics

View full text Add to dashboard Cite

The compounds CsPbCl3 and CsPbBr3, which are known to be one of the most luminescent semiconductors, show enhanced photoluminescence for thin films prepared by crystallization from the amorphous phase into microcrystalline/polycrystalline states. The microcrystalline state shows more than an order of magnitude stronger free-exciton emission than the polycrystalline state, as well as than bulk single crystal. A possible explanation for this phenomenon is given in terms of excitonic superradiance. The extreme radiance of the thin-film samples is fascinating when considering application in opto-electronic micro-devices

show abstract

Spectroscopy of CsPbBr3 quantum dots in CsBr:Pb crystals

Cited by 46 publications

References 12 publications

Luminescence of aggregate centers in CsBr:Eu2+ single crystals

Luminescence of aggregate centers in CsBr:Eu2+ single crystals

Luminescence properties of Sn-containing microcrystals in CsBr:Sn crystal

Extremely photo-luminescent microcrystalline CsPbX3 (X=Cl, Br) films obtained by amorphous-to-crystalline transformation

Contact Info

Product

Resources

About