Spectroscopic ellipsometry characterization of Ba0.7Sr0.3TiO3 thin films prepared by the sol-gel method

Suzuki, Iwao; Ejima, M.; Watanabe, Kenichi; Xiong, Yi–Ming; Saitoh, Tadashi

doi:10.1016/s0040-6090(97)00820-1

Cited by 28 publications

(13 citation statements)

References 7 publications

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“…Gao et al [5] in their recent work have used in situ SE to study Ba 0.5 Sr 0.5 TiO 3 thin films deposited by ion beam sputtering. Their BST films showed n values higher than films prepared by the sol-gel method [7]. Their BST films showed n values higher than films prepared by the sol-gel method [7].…”

Section: Introductionmentioning

confidence: 82%

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Spectroscopic Ellipsometry of BaxSr1?xTiO3 Thin Films Prepared by the Sol-Gel Method

Yang

Tian³

et al. 2002

phys. stat. sol. (a)

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Subject classification: 77.55.+f; 78.20.Ci; 81.20.Fw Stoichiometric Ba x Sr 1Àx TiO 3 (BST) thin films with various values of x were prepared on Si(100) substrates by the sol-gel method. The influence of Sr content on the structure and the optical properties was studied by X-ray diffraction (XRD) and spectroscopic ellipsometry (SE) in the UV-visible region. The measured SE spectra were analyzed with an appropriate procedure to accurately determine the thickness and the optical constants of thin films. It has been found that the optical constants of the BST films are functions of the film composition. The optical bandgap energy increases with the increasing of Sr content.

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Section: Introductionmentioning

confidence: 82%

“…In the literature, there have been some studies on the optical properties of BaTiO 3 or BST films [4][5][6][7][8][9][10][11][12]. The works by Jellison et al [4], Gao et al [5], McKee et al [6], and Suzuki et al [7] have used SE to study BaTiO3 in the transparent region (lies below $3.4 eV).…”

Section: Introductionmentioning

confidence: 99%

Spectroscopic Ellipsometry of BaxSr1?xTiO3 Thin Films Prepared by the Sol-Gel Method

Yang

Tian³

et al. 2002

phys. stat. sol. (a)

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“…The I-V characteristic for a (Ba 0.67 Sr 0.33 )Ti 1.02 O 3 sample measured at different temperatures is shown in Fig. 18 42 On the basis of the above experimental results and discussion, we can conclude that the Schottky emission model is the conduction mechanism in our amorphous BST thin films. 18.…”

Section: E Conduction Mechanismmentioning

confidence: 59%

Preparation, Property, and Mechanism Studies of Amorphous Ferroelectric (Ba, Sr)TiO₃ Thin Films for Novel Metal–ferroelectric–metal Type Hydrogen Gas Sensors

et al. 2000

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Ferroelectric (Ba 0.67 Sr 0.33 )Ti x O 3 (BST) thin films with x ‫ס‬ 0.98, 1.00, 1.02, and 1.04 were prepared by the sol-gel technology, and their thermal, structural, dielectric, and gas sensing properties were systematically characterized. The amorphous (Ba 0.67 Sr 0.33 )Ti x O 3 thin film capacitive devices were made on Si substrate to detect hydrogen gas and to study hydrogen-induced interfacial polarization potential. Experimental results showed that the Schottky I-V behavior appears in these Pd/amorphous BST thin film/metal capacitive devices and that enhanced interfacial dipole potentials as large as 4.5 V at 1000 ppm hydrogen gas in air were newly observed, which is about 7 times larger than the best value reported under similar testing conditions. It was clearly shown that the hydrogen-induced interfacial polarization potential is closely correlated with the microstructure of ferroelectric thin films and the enhancement of this interfacial polarization potential is mainly attributed to the high dielectric constant of amorphous ferroelectric thin films. A simple hydrogen interface-blocking model is also presented to explain this interesting phenomenon.

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“…STO ferroelectric thin film is the basis for realization of electronic integration. There are several technologies of preparing STO thin films which has a widely use in current application, such as Sol -gel (Sol-Gel) method [5][6] , chemical vapor deposition (CVD) method [7] , RF sputtering (RF) method [8] , molecular beam epitaxy (MBE) method [9] and pulsed laser deposition (PLD) method [10][11][12][13] and so on.…”

Section: Introductionmentioning

confidence: 99%

Effect of variable substrate temperature for SrTiO 3 thin films using pulsed laser deposition

Wan

Wang

et al. 2010

SPIE Proceedings

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In this paper, the high temperature solid state reaction method was applied to the preparation of SrTiO 3 ceramic target.The phase of the target has been researched in experiment by X-ray diffraction (XRD). We found that solid state reaction has achieved completely. Then SrTiO 3 thin films on MgO (100) substrate were manufactured by PLD using the triple-frequency harmonics of pulsed laser Nd: YAG. The thickness of the SrTiO 3 thin films was measured using a stylus profiler. Their microstructure and surface morphology were analyzed using X-ray diffraction (XRD) and atomic force microscopy (AFM). Their optical character was characterized using optical transmission spectrum. Additionally, X-ray photoelectron spectroscopy (XPS) spectra were used to characterize the surface chemical composition of the SrTiO 3 thin film. In accordance with the above text result, the relation between the substrate temperature and the SrTiO 3 thin films' the structure and character was analyzed and discussed. With increasing temperature of the substrate, film grain size gradually increased and then smaller. The optimized substrate temperature was found to be 700°C at which the STO films' structure could uniformly dense. The STO films present a low optical absorption in the 400~1000nm wavelength range, and the substrate temperature is not the main reason for the impact of the optical absorption. The optical band gap energy was found to be about 3.5 ~ 4.0eV for the STO thin film. The valences of the three elements (Sr, Ti, and O) in the STO film prepared by PLD are 2+, 4+ and 2-, respectively.

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Spectroscopic ellipsometry characterization of Ba0.7Sr0.3TiO3 thin films prepared by the sol-gel method

Cited by 28 publications

References 7 publications

Spectroscopic Ellipsometry of BaxSr1?xTiO3 Thin Films Prepared by the Sol-Gel Method

Spectroscopic Ellipsometry of BaxSr1?xTiO3 Thin Films Prepared by the Sol-Gel Method

Preparation, Property, and Mechanism Studies of Amorphous Ferroelectric (Ba, Sr)TiO₃ Thin Films for Novel Metal–ferroelectric–metal Type Hydrogen Gas Sensors

Effect of variable substrate temperature for SrTiO 3 thin films using pulsed laser deposition

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Spectroscopic ellipsometry characterization of Ba0.7Sr0.3TiO3 thin films prepared by the sol-gel method

Cited by 28 publications

References 7 publications

Spectroscopic Ellipsometry of BaxSr1?xTiO3 Thin Films Prepared by the Sol-Gel Method

Spectroscopic Ellipsometry of BaxSr1?xTiO3 Thin Films Prepared by the Sol-Gel Method

Preparation, Property, and Mechanism Studies of Amorphous Ferroelectric (Ba, Sr)TiO3 Thin Films for Novel Metal–ferroelectric–metal Type Hydrogen Gas Sensors

Effect of variable substrate temperature for SrTiO 3 thin films using pulsed laser deposition

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Preparation, Property, and Mechanism Studies of Amorphous Ferroelectric (Ba, Sr)TiO₃ Thin Films for Novel Metal–ferroelectric–metal Type Hydrogen Gas Sensors