Specific contact resistance and carrier tunneling properties of the silver metal/porous silicon/p-Si ohmic contact structure

Electrical performance in iron-passivated porous silicon film

“…They reported that the current-voltage (I-V) characteristic of Ag/PS structure shows a rectifying effect and the electrical conductivity increases with the increasing metallization time. To understand the electrical transport properties of the ohmic contacts to the Ag/PS structure, Vinod [16] has measured the doping level dependence of the specific contact resistance and the I-V characteristics. He reported that at low forward bias voltage, the I-V curve follows an ohmic behaviour governed by the carrier injection due to the space charge limited current or filed-induced tunnelling process from the Ag metal contacts into the PS layer.…”

The Mechanism of Metal-Assisted Etching of Silicon

“…There are reports on the ohmic behavior of Al to PSi after the surface modification, presumably due to the reduction of the porosity through surface passivation (Kanungo et al 2009a;Maji et al 2010). Ag has also been shown to behave as the ohmic junction to PSi (Vinod 2005(Vinod , 2009(Vinod , 2013). An interesting observation has been reported on Ni contact to PSi (Dhar and Chakrabarti 1996).…”

“…Al p Evaporation Dhar and Chakrabarti 1996;Zimin and Komarov 1998;Kanungo et al 2009a;Maji et al 2010 n Evaporation Simons et al 1995;Zimin et al 1995;Zimin and Komarov 1998 Ag p Screen printing Vinod 2005Vinod , 2009Vinod , 2013 Ni p Electroless Kanungo et al 2006;Andersson et al 2008 n Electroless Dhar and Chakrabarti 1996 PtSi p Sputtering Ichinohe et al 1996 Rectifying Contacts…”

“…The specific contact resistance of Al and Ni contact to p-type PSi (55% porosity) (Kanungo et al 2006(Kanungo et al , 2009a and Al contact to macroporous silicon (Maji et al 2010) are reported. Similarly, the quantitative measurement of the specific contact resistance has been studied (Vinod 2005(Vinod , 2009(Vinod , 2013 for silver ohmic contact to p-type porous silicon. Table 14.2 gives the summary of the reported work on specific contact resistance or transition specific resistivity measurements.…”

Electrical and Microstructural Analysis of Contact Formation on Lightly Doped Phosphorus Emitters Using Thick-Film Ag Screen Printing Pastes

“…In Si wafer solar cells, forming a good contact between the emitter and the screen-printed Ag paste is essential to achieving high PV efficiency [4]. The Ag paste consists of Ag powder, glass frits, and organic materials [5].…”