Spatial Distributions of Electron, CF, and CF₂Radical Densities and Gas Temperature in DC-Superposed Dual-Frequency Capacitively Coupled Plasma Etch Reactor Employing Cyclic-C₄F₈/N₂/Ar Gas

Heating mode transition in a hybrid direct current/dual-frequency capacitively coupled CF4 discharge

“…The low frequency (LF) component usually operates with large voltage amplitude to control the ion energy and angular distributions, whereas the high frequency (HF) component with small voltage amplitude is typically used to determine the plasma density and ion flux. Lai et al 9 and Yamaguchi et al 10,11 have experimentally shown that the plasma density and the etch rate can be increased by introducing an extra negative direct current (dc) potential to the RF discharge. Yamaguchi et al also pointed out that the superposed negative dc bias can significantly improve the selectivity of the etching of SiOCH over SiC in a DF CF 4 discharge.…”

Real-time temperature monitoring of Si substrate during plasma processing and its heat-flux analysis

“…Actually, the spatial distribution of radical density dropped at positions above the FR at temperatures higher than that of a wafer. 31,33) To raise the production efficiency, industrial plasma etching processing prevents the FR from reaching high temperatures. In accordance with these findings, we emphasize that, in the control of temporal changes, the temperature of the wafer should be considered FR temperature.…”

Electron impact ionization of perfluoro-methyl-vinyl-ether C3F6O

“…We were thus prompted to investigate alternative gases for the selective formation of + CF 3 ions. Several gases-C 3 F 6 [10], C 4 F 6 [11,12], C 6 F 6 [13], c-C 4 F 8 [14][15][16][17][18][19], c-C 5 F 8 [20], c-C 5 HF 7 [20], etc-appear suited for plasma etching. The electron interactions of CF 4 , CHF 3 , C 2 F 6 and C 3 F 8 , reviewed by Christphorou et al [21], are a key issue.…”