Spatial distribution of channeled ions

Abstract

An investigation is made of the dependence of distributions of implanted heavy ions, with the inclusion of the channeling effect, upon the initial ion energy, the thickness of the amorphous layer on the crystal surface, the direction of target irradiation, the target temperature, the angle of orientation of the ion beam with respect to the channel axis, the type of irradiating ions, and the radiation dose. Problems of capture of ions into channels are also considered. TeopeTHsecm H3ysaIOTCH npOCTpaHCTBeHHbIe paCnpeAeneHHH KaHaJlHpOBaHHbIX IlOHOB B 3aBHCIlMOCTH OT Ha%lJlbHOfi 3HeprEIH EIOHOB, OT TOJIlrlIlHbI aMOp@HOI' O CJIOH Ha no-BePXHOCTH KpHCTaJlJla, OT HaIIpaBJleHHH o 6 n y y e~~~ MHUIeHH, OT TeMIlepaTyphI MEIUleHIl, OT yrna MeKay ocbm KaHana H HanpaBnemeM nywa, OT copTa EIOHOB, OT ~0 3~ o6ny-YeHHH. 06CyKn~ieTCH TaKxie npo6ne~a 3 a x~a~a HOHOB B HaHan. 117234 Moscow, USSR.

Enhanced phenomenological models of ion channeling contribution to doping profiles in crystals

“…To fit the doping profiles, this formula makes it possible to apply different representations of P ch (z) including those obtained within the framework of microscopic models of channeling kinetics [29,23].…”

“…Only electronic S ch (E) (also borrowed from the SRIM2006 database) were incorporated into these calculations since for the stable channeling of sufficiently light Boron ions they are known to significantly exceed the nuclear ones due to a strong flux-peaking effect [8,29].…”