Space charge limited conduction in CdSe thin films

Kalita, Pranjal; Sarma, Bimal K.; Das, Hirendra

doi:10.1007/bf02704325

Cited by 48 publications

(12 citation statements)

References 15 publications

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“…where ε is the dielectric constant of CdSe sample whose value is taken to be 5⋅76 (Kalita et al 2003). Using (7) in (6) the relation for capture cross section is given by…”

Section: Mobility Activation In Cdse Thin Filmsmentioning

confidence: 99%

Mobility activation in thermally deposited CdSe thin films

Sarmah

Sarma

2009

Bull Mater Sci

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Effect of illumination on mobility has been studied from the photocurrent decay characteristics of thermally evaporated CdSe thin films deposited on suitably cleaned glass substrate held at elevated substrate temperatures. The study indicates that the mobilities of the carriers of different trap levels are activated due to the energy of incident illumination, which results in the existence of two distinct trap levels. In each trap depth the energy of the trap increases linearly. It infers that there is a linear distribution of traps of different energies below the conduction band.

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“…where ε is the dielectric constant of CdSe sample whose value is taken to be 5⋅76 (Kalita et al 2003). Using (7) in (6) the relation for capture cross section is given by…”

Section: Mobility Activation In Cdse Thin Filmsmentioning

confidence: 99%

Mobility activation in thermally deposited CdSe thin films

Sarmah

Sarma

2009

Bull Mater Sci

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“…The value of voltage exponent, in second section, shows that the traps in the bandgap of Sb 2 O 3 have exponential energy distribution [23,24]. In the ohmic region simply Ohm's law for n-type semiconductor may describe it [10]:…”

Section: Field E>10mentioning

confidence: 99%

Structure and electrical conduction of Sb2O3 thin films

Tigau

2006

Cryst. Res. Technol.

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Antimony trioxide (Sb 2 O 3 ) thin films have been deposited onto glass substrates using thermal evaporation technique at room temperature. The structural feature and surface morphology were characterized by transmission electron microscopy (TEM) and scanning electron microscopy (SEM). Sandwich-type structures were deposited with films thickness d = 0.55 µm using evaporated electrodes of silver. Current-voltage (J-U) characteristics have been measured at various fixed temperatures in the range 293-473 K. In all cases, at low electric field (E<10 4 V/cm), ohmic behavior is observed. However, at high electric field (E>10 4 V/cm), nonohmic behavior is observed. An analysis of the experimental data indicates that in the range of high-applied electric field, the dominant conduction mechanism is space charge limited currents (SCLC). Using the relevant SCLC theory, the carrier concentration, total trap concentration and the ratio of free charge to trapped charge have been calculated and correlated with changes in the structures of antimony trioxide thin films.

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“…The group of chalcogenide glass A II B VI compounds has been found to be of much interest owing to their wide range of chemical, structural, electrical and optical properties [1,2]. Intensive investigations have been carried out to prepare such compounds in single crystal and thin film form [3,4].…”

Section: Introductionmentioning

confidence: 99%