Structure and electrical conduction of Sb2O3 thin films

Tigau, N.

doi:10.1002/crat.200610730

Cited by 15 publications

(3 citation statements)

References 21 publications

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“…The focus of previous studies for Sb 2 O 3 has been the electrical, vibrational and optical properties [6,7,27,28,29]. Optical band gaps in the range of 3.40-4.00 eV have been reported for Sb 2 O 3 , with the indirect/direct nature of the band gap unclear [6,7,28]. Hartree-fock calculations were used to characterise the electronic density of the Sb 4 O 6 clusters in the Senarmontite structure, indicating the presence of lone pairs on the Sb cations [30].…”

Section: Introductionmentioning

confidence: 99%

The electronic structure of the antimony chalcogenide series: Prospects for optoelectronic applications

Carey

Allen

Scanlon

et al. 2014

Journal of Solid State Chemistry

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The electronic structure of the antimony chalcogenide series: Prospects for optoelectronic applications, Journal of Solid State Chemistry, http: //dx.doi.org/10. 1016/j.jssc.2014.02.014 This is a PDF file of an unedited manuscript that has been accepted for publication. As a service to our customers we are providing this early version of the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting galley proof before it is published in its final citable form. Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain. www.elsevier.com/locate/jsscThe electronic structure of the antimony chalcogenide series:Prospects for optoelectronic applications

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Section: Introductionmentioning

confidence: 99%

The electronic structure of the antimony chalcogenide series: Prospects for optoelectronic applications

Carey

Allen

Scanlon

et al. 2014

Journal of Solid State Chemistry

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“…They also used density of states analysis to show that the presence of asymmetric density correlated with the amount of mixing between the cation p states and the antibonding cation s–O p interaction at the top of the valence band. Other studies of α-Sb 2 O 3 have focused on its structural and electrical properties − and its characterization with Raman spectroscopy. ,− Similarly, the majority of the previous studies on the mixed valence oxide, Sb 2 O 4 , have also typically focused on the structure/Raman spectra. , Due to its use as a mixed-oxide catalyst, there has been additional study of the defect chemistry associated with dopants in Sb 2 O 4 . For example, Moore and Widatallah reported that the dominant intrinsic defect in the low temperature α-form is an oxygen Frenkel and that the incorporation of Fe III into the structure occurs via substitution with Sb III ions .…”

Section: Introductionmentioning

confidence: 99%

Electronic Structures of Antimony Oxides

et al. 2013

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This study details density functional theory calculations on all the polymorphs of the binary oxides of antimony (Sb 2 O 3 , Sb 2 O 4 , and Sb 2 O 5 ) to assess the electronic structures and differences in bonding between Sb III and Sb V ions with oxygen. The results show that lone-pair formation is via a similar mechanism to other main group elements which exhibit an oxidation state of two less than the group valence, through direct interaction of Sb 5s and O 2p states, with the antibonding interaction stabilized by Sb 5p states. Furthermore, structural distortion of the Sb site directly affects the strength of the resulting lone pair. In addition to the analysis of the density of states and charge density, band structures and optical absorption spectra are also detailed. The results indicate that all materials are indirect band gap materials, with the exception of the β-polymorphs of Sb 2 O 3 and Sb 2 O 4 . In addition, the fundamental and optical band gaps of the materials are found to decrease from Sb 2 O 3 to Sb 2 O 4 to Sb 2 O 5 . Calculated band-edge effective masses suggest that β-Sb 2 O 3 may exhibit reasonable p-type properties. Furthermore, β-Sb 2 O 3 , γ-Sb 2 O 3 , and Sb 2 O 5 possess low electron effective masses which are conducive with strong n-type conduction.

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“…The measurement results of Hall effect (Table S1, Supporting Information) show that the majority carriers of Si are holes, and the majority carriers of Sb 2 O 3 are electrons. [37,38] And the Fermi energy level of PdTe 2 is between the Fermi energy levels of Sb 2 O 3 and p-type Si (Figure S1b,c, Supporting Information). The introduction of PdTe 2 in Sb 2 O 3 /Si heterojunction constructs the Sb 2 O 3 /PdTe 2 /Si heterojunction structure.…”

Section: Working Mechanism Of Sb 2 O 3 /Pdte 2 /Si Heterojunctionmentioning

confidence: 99%

Self‐Powered and Broadband Photodetectors Based on High‐performance Mixed Dimensional Sb₂O₃/PdTe₂/Si Heterojunction for Multiplex Environmental Monitoring

Wang,

Ling,

Xue

et al. 2023

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Solar‐blind ultraviolet (SBUV) to near‐infrared (NIR) broadband photodetectors (BB‐PD) have important applications in environmental monitoring and other applications. However, it is challenging to prepare SBUV–IR photosensitive materials via simple steps and to construct SBUV–IR broadband devices for multiplex detection with high sensitivity at different wavelengths. Here, self‐powered and broadband photodetectors using a high‐performance mixed dimensional Sb2O3 nanorod 1‐dimension (1D)/monodisperse microdiamond‐like PdTe2 3‐dimension (3D)/Si (3D) heterojunction for multiplex detection of environmental pollutants with high sensitivity at broadband wavelength are developed. The 1D/3D mixed dimensional Sb2O3/PdTe2/Si structure combines the advantages of strong light absorption, high carrier transport efficiency of 1D Sb2O3 nanorods, and expansion of interface barrier caused by 3D microdiamond‐like PdTe2 interlayer to improve the photocurrent density and self‐powered ability. The efficient photogenerated charge separation enables anon/off ratio of more than 5 × 106. The device exhibits excellent photoelectric properties from 255 to 980 nm with the responsivity from 4.56 × 10−2 to 6.55 × 10−1 AW−1, the detectivity from 2.36 × 1012 to 3.39 × 1013 Jones, and the sensitivity from 3.90 × 107 to 1.10 × 1010 cm2 W−1 without external bias. Finally, the proposed device is applied for the multiplex monitoring of environmental pollution gases NO2 with the detection limit of 200 ppb and PM2.5 particles at mild pollution at broadband wavelength. The proposed BB‐PD has great potential for multiplex detection of environmental pollutants and other analytes at broadband wavelength.

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Structure and electrical conduction of Sb2O3 thin films

Cited by 15 publications

References 21 publications

The electronic structure of the antimony chalcogenide series: Prospects for optoelectronic applications

The electronic structure of the antimony chalcogenide series: Prospects for optoelectronic applications

Electronic Structures of Antimony Oxides

Self‐Powered and Broadband Photodetectors Based on High‐performance Mixed Dimensional Sb₂O₃/PdTe₂/Si Heterojunction for Multiplex Environmental Monitoring

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Structure and electrical conduction of Sb2O3 thin films

Cited by 15 publications

References 21 publications

The electronic structure of the antimony chalcogenide series: Prospects for optoelectronic applications

The electronic structure of the antimony chalcogenide series: Prospects for optoelectronic applications

Electronic Structures of Antimony Oxides

Self‐Powered and Broadband Photodetectors Based on High‐performance Mixed Dimensional Sb2O3/PdTe2/Si Heterojunction for Multiplex Environmental Monitoring

Contact Info

Product

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Self‐Powered and Broadband Photodetectors Based on High‐performance Mixed Dimensional Sb₂O₃/PdTe₂/Si Heterojunction for Multiplex Environmental Monitoring