Some spectral response characteristics of ZnTe thin films

Abstract

Zinc telluride thin films have been grown at room temperature and higher temperature substrates by thermal evaporation technique in a vacuum of 10-6 torr. A main peak in the photocurrent is observed at 781 nm (1⋅ ⋅58 eV) with two lower amplitude peaks on the lower wavelength side and one on higher wavelength side. The evaluated thermal activation energy is found to correspond well with the main spectral peak. From these studies it can be inferred that temperatures up to 453 K is still in the extrinsic conductivity region of the studied ZnTe thin films.

Evaluation of the Thickness in Nanolayers Using the Transfer Matrix Method for Modeling the Spectral Reflectivity

“…Zinc telluride is a promising semiconductor material of II-VI groups for fabrication of high efficiency thin film solar cells and other optoelectronic devices due to its suitable intrinsic energy gap, 2.26 eV [8]. The reflectance measurements in the visible range were measured by employing an UV-Vis unicam photospectrometer.…”