2009
DOI: 10.1155/2009/594175
|View full text |Cite
|
Sign up to set email alerts
|

Evaluation of the Thickness in Nanolayers Using the Transfer Matrix Method for Modeling the Spectral Reflectivity

Abstract: The reflectivity spectra have been traditionally used to determine the thicknesses in semiconductor films. However, thicknesses of nanofilms are not easy to evaluate because the interference fringes are not visible in the transparent region. In this paper, we present a computed method based on the transfer matrix (TM) which is used to match the calculated and experimental room temperature reflectivity spectra of the ZnTe/GaAs films and to determine its thickness film values afterwards. The TM method needs only… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1

Citation Types

0
3
0

Year Published

2013
2013
2021
2021

Publication Types

Select...
4
1

Relationship

0
5

Authors

Journals

citations
Cited by 5 publications
(3 citation statements)
references
References 10 publications
0
3
0
Order By: Relevance
“…For example, for ∆=186.37 0 and Ψ=51.317 0 , the film thickness with n f =1.4 For films with thicknesses greater than d min , further measurements are needed to determine the thickness, due to the periodicity of the functions ∆=f(d f ) and Ψ=f(d f ). Usually, interferometer measurements are used to determine the order of magnitude of d f , with a precision of 0.1 µm [4,5,6]. Typically, the thickness d min value is on the order of 0.3÷0.5 µm.…”
Section: The Dependence Of the Ellipsometricalmentioning
confidence: 99%
“…For example, for ∆=186.37 0 and Ψ=51.317 0 , the film thickness with n f =1.4 For films with thicknesses greater than d min , further measurements are needed to determine the thickness, due to the periodicity of the functions ∆=f(d f ) and Ψ=f(d f ). Usually, interferometer measurements are used to determine the order of magnitude of d f , with a precision of 0.1 µm [4,5,6]. Typically, the thickness d min value is on the order of 0.3÷0.5 µm.…”
Section: The Dependence Of the Ellipsometricalmentioning
confidence: 99%
“…In this paper, the interaction of dielectric layer and the light waves is determined by transfer matrix method (TMM) [8]. Taking into account the boundary conditions for electric (E) and magnetic (H) fields, a matrix equation will be obtained which relates the fields at two adjacent boundaries:…”
Section: Model and Calculation Of 3-d Photonic Crystal With Fcc Struc...mentioning
confidence: 99%
“…The reduced thickness of nanocoatings commonly requires the use of very specific characterization techniques like those based on X‐ray photoelectron spectroscopy, 19,20 atomic force and electron microscopy, 21,22 Rutherford backscattering spectroscopy, 23 ellipsometry, 4,13,15,16,18,24–26 or transmittance‐reflectance spectroscopy, 8,27,28 among others. These techniques require long acquisition times, sample destruction, and/or high‐energy (deep UV or X‐ray) excitation wavelengths.…”
Section: Introductionmentioning
confidence: 99%