Review on optical, structural and electrical properties of ZnTe thin films: effect of deposition techniques, annealing and doping

An overview on the role of ZnTe as an efficient interface in CdTe thin film solar cells: a review

“…The growth and characterization to fabricate the constituent layers with simple manufacturing processes need to be studied. [41][42][43][44][45][46] Among the second-generation solar cells, for the development of CdTe thin film solar cell devices, the typical architecture used thus far is glass/TCO/CdS/CdTe/ZnTe/metal contact, while in recent years, due to the evolution of materials, modified architecture as Glass/MZO/CdSeTe/CdTe/ZnTe/metal contact has also been applied to achieve an elevated performance, where MZO (magnesium-doped zinc oxide) is used as a window layer instead of the conventional CdS together with CdSeTe (CdSe x Te 1Àx )/CdTe as a graded absorber. An illustration of the typical CdSeTe/CdTe architecture device is provided in Fig.…”

Effect of phosphoric acid treatment on the physical properties of zinc telluride thin films

“…2) show that all the ZnTe thin films (with or without immersion in phosphoric acid) prepared at the same substrate temperature and having almost the same thickness are present as a crystalline structure composed of cubic phase with a (111) preferred orientation. This structure and preferred orientation are common for ZnTe films deposited with a wide variety of techniques [1][2][3][4][5][6][7][8][9][10][11][12]. No notable changes in film structure or orientation were observed after immersion in phosphoric acid as in Fig.…”

“…The (111) peak positions which are located at 2θ are 25.4198 0 , 25.3996 0 , 25.4196 0 , and 25.3991 0 for the films deposited at different immersion times, respectively. The variation in crystalline size of the films was determined from the full width at halfmaximum (FWHM ) of the peak corresponding to the (111) plane using the Scherer relation [1,4]…”

“…ZnTe is one of the group II-VI semiconductors having a wide range of applications such as green light emitting diodes [1,2] due to its excellent electrical and optical properties. ZnTe is a p-type semiconductor with a direct band gap of 2.26 eV and a zinc-blend structure [3,4]. In addition to that doped ZnTe is used as a buffer layer, between CdTe absorber and metallic contact, in CdTe/CdS solar cells [5].…”

Wurtzite materials in alloys of rock salt compounds

“…Binary metal-chalcogenide semiconductors are w idely used in optoelectronic devices [1]. Structures containing tetrahedrally coordinated (T d ) bonding motifs are often preferable for these applications because they have wide direct band gaps and low electron effective masses, and because they are structurally compatible with other chalcogenide materials.…”