Some issues of hot-carrier degradation and negative bias temperature instability of advanced SOI CMOS transistors

Hot carrier and PBTI induced degradation in silicon nanowire gate-all-around SONOS MOSFETs

“…It is worth to note that the difference between the result of the forward and the reverse mode measurement decreases with increase of the stress temperature. The decrease of the reverse to forward degradation ratio with increase of the stress temperature means that the location of damage in the channel is shifted further way from the drain [13]. Therefore, it is reasonable to assume that the more extension of the damage region toward the source region leads to the more HC degradation at high stress temperature.…”

A Guideline for the Optimum Fin Width Considering Hot-Carrier and NBTI Degradation in MuGFETs

“…At present levels of gate oxide thickness and electric fields, negative-bias-temperature-instability (NBTI) and hotcarrier effects are reported to be serious reliability problem in nanometer-scale p-channel MuGFET (p-MuGFET) technologies. NBTI degradation is more significant for narrow FinFETs [2]- [4], and hot-carrier degradation at elevated temperature is more significant in devices with wider fins [5], [6]. Several studies on the influence of W F on the NBTI and hot-carrier degradations have been reported [2]- [6], but a study on the device design guidelines for determining the optimum W F and n F to maximize the device lifetime has not been investigated.…”