A comprehensive study of channel hot-carrier degradation in short channel MOSFETs with high-k dielectrics

Amat, E.; Kauerauf, T.; Rodrı́guez, R.; Nafría, M.; Aymerich, X.; Degraeve, R.; Groeseneken, G.

doi:10.1016/j.mee.2012.10.011

Cited by 18 publications

(7 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Thin films of amorphous (a) hafnium dioxide a-HfO 2 are used for optical coating [1,2] and as the gate dielectric in complementary metal oxide semiconductor (CMOS) technology due to high dielectric constant and reliability [3,4]. Hafnia layers are also applied in resistive memory devices [5][6][7] and as the gate dielectric for thin film transistors (TFTs) based on metal oxide channel materials, such as indium zinc oxide and indium gallium zinc oxide [8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Interactions of hydrogen with amorphous hafnium oxide

2017

View full text Add to dashboard Cite

We used density functional theory (DFT) calculations to study the interaction of hydrogen with amorphous hafnia (a-HfO 2 ) using a hybrid exchange-correlation functional. Injection of atomic hydrogen, its diffusion towards electrodes, and ionization can be seen as key processes underlying charge instability of high-permittivity amorphous hafnia layers in many applications. Hydrogen in many wide band gap crystalline oxides exhibits negative-U behavior (+1 and −1 charged states are thermodynamically more stable than the neutral state) . Our results show that in a-HfO 2 hydrogen is also negative-U, with charged states being the most thermodynamically stable at all Fermi level positions. However, metastable atomic hydrogen can share an electron with intrinsic electron trapping precursor sites [Phys. Rev. B 94, 020103 (2016).] forming a [e − tr + O-H] center, which is lower in energy on average by about 0.2 eV. These electron trapping sites can affect both the dynamics and thermodynamics of the interaction of hydrogen with a-HfO 2 and the electrical behavior of amorphous hafnia films in CMOS devices.

show abstract

Section: Introductionmentioning

confidence: 99%

Interactions of hydrogen with amorphous hafnium oxide

2017

View full text Add to dashboard Cite

show abstract

“…Takeda et al [7] Probing the DAHC injection and In this study, we used a HK-stack and metal gate (MG) as the n-MOSFET structure to analyze the variation in substrate current under hot carrier stresses [22]. In Equation ( 1), the severity of hot carrier injection is observed by the degradation in the substrate current, related to the issues of device lifetime.…”

Section: Purpose Stress Methods Specificationsmentioning

confidence: 99%

“…Table 1. The comparison of quoted references [7][8][9][10][11][12]17,22] in the former and present process technologies.…”

Section: Introductionmentioning

confidence: 99%

Hot Carrier Stress Sensing Bulk Current for 28 nm Stacked High-k nMOSFETs

et al. 2020

View full text Add to dashboard Cite

This work primarily focuses on the degradation degree of bulk current (IB) for 28 nm stacked high-k (HK) n-channel metal–oxide–semiconductor field-effect transistors (MOSFETs), sensed and stressed with the channel-hot-carrier test and the drain-avalanche-hot-carrier test, and uses a lifetime model to extract the lifetime of the tested devices. The results show that when IB reaches its maximum, the ratio of VGS/VDS values at this point, in the meanwhile, gradually increases in the tested devices from the long-channel to the short ones, not just located at one-third to one half. The possible ratiocination is due to the ON-current (IDS), in which the short-channel devices provide larger IDS impacting the drain junction and generating more hole carriers at the surface channel near the drain site. In addition, the decrease in IB after hot-carrier stress is not only the increment in threshold voltage VT inducing the decrease in IDS, but also the increment in the recombination rate due to the mechanism of diffusion current. Ultimately, the device lifetime uses Berkley’s model to extract the slope parameter m of the lifetime model. Previous studies have reported m-values ranging from 2.9 to 3.3, but in this case, approximately 1.1. This possibly means that the critical energy of the generated interface state becomes smaller, as is the barrier height of the HK dielectric to the conventional silicon dioxide as the gate oxide.

show abstract

“…Because HCD is related to the MFP of carriers, and the increase of temperature intensifies the lattice vibration and reduces the MFP, the HCD of long channel devices decreases with the increase of temperature [3,4]. However, the relationship between HCD and temperature of short channel devices is opposite to that of long channel devices [3,4], which is explained by HCD of short channel devices is no longer determined by MFP and electric field as a result of the channel quasi ballistic transport and the reduction of bias voltage, but controlled by carrier energy distribution function (EDF) [5,6]. As the energy distribution of carriers moves to higher energy with the increase of temperature, HCD of short channel devices intensifies with the increase of temperature.…”

Section: Introductionmentioning

confidence: 99%

Accurate analytical models of hot carrier degradation in nMOSFET and nFinFET considering saturation effect

Li¹,

Wu²,

Zhang³

et al. 2022

Semicond. Sci. Technol.

View full text Add to dashboard Cite

In this paper, models of hot carrier degradation (HCD) in nMOSFET and nFinFET, combined with the physical mechanism and reaction-diffusion framework and considering saturation effect, are proposed. The HCD data of different technology nodes of nMOSFET and nFinFET are used to verify the accuracy of the models. The results show that the prediction errors of device parameter degradation under different stress voltages are less than 10% for several types of short channel devices, which is better than the existing reported research results. Furthermore, the models have simple analytical expressions that allow them to not only be applied to device HCD prediction, but also be extended to circuit level HCD prediction tool more easily.

show abstract

A comprehensive study of channel hot-carrier degradation in short channel MOSFETs with high-k dielectrics

Cited by 18 publications

References 19 publications

Interactions of hydrogen with amorphous hafnium oxide

Interactions of hydrogen with amorphous hafnium oxide

Hot Carrier Stress Sensing Bulk Current for 28 nm Stacked High-k nMOSFETs

Accurate analytical models of hot carrier degradation in nMOSFET and nFinFET considering saturation effect

Contact Info

Product

Resources

About