Some electrical properties of solution–grown crystals of n-ZnSiP2 and p-ZnGeP2

SpringThorpe, A. J.; Monk, R. W.

doi:10.1002/pssa.19700010125

Cited by 22 publications

(3 citation statements)

References 5 publications

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“…The fundamental properties of ZnSiP 2 have been studied since the late 1950's using crystals that have been grown in a flux (typically Zn or Sn) or by halogen assisted vapor transport. 2,11,12,[19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34][35][36] Studies of these crystals reveal that ZnSiP 2 has a very small lattice mismatch with Si of 0.5% (Fig. 1), has a band gap of B2.1 eV, forms with minimal atomic disorder, and is structurally stable at temperatures up to 800 1C.…”

Section: Introductionmentioning

confidence: 99%

“…11,12,[33][34][35][36][37][38][39] Doping of ZnSiP 2 has yielded n-type (Se, Te, In, or Ga) and p-type (Cu) crystals. 11,19,20,28,31 Some characterization has been done which is specifically relevant to the applications of tandem PV cells with silicon. Several authors have proposed and discussed the prospects of ZnSiP 2 heterojunctions with Si.…”

Section: Introductionmentioning

confidence: 99%

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Solar energy conversion properties and defect physics of ZnSiP₂

Martinez

Warren

Gorai

et al. 2016

Energy Environ. Sci.

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Implementation of an optically active material on silicon has been a persistent technological challenge. For tandem photovoltaics using a Si bottom cell, as well as for other optoelectronic applications, there has been a longstanding need for optically active, wide band gap materials that can be integrated with Si. ZnSiP 2 is a stable, wide band gap (2.1 eV) material that is lattice matched with silicon and comprised of inexpensive elements. As we show in this paper, it is also a defect-tolerant material. Here, we report the first ZnSiP 2 photovoltaic device. We show that ZnSiP 2 has excellent photoresponse and high open circuit voltage of 1.3 V, as measured in a photoelectrochemical configuration. The high voltage and low band gap-voltage offset are on par with much more mature wide band gap III-V materials. Photoluminescence data combined with theoretical defect calculations illuminate the defect physics underlying this high voltage, showing that the intrinsic defects in ZnSiP 2 are shallow and the minority carrier lifetime is 7 ns. These favorable results encourage the development of ZnSiP 2 and related materials as photovoltaic absorber materials. Broader ContextOf all the renewable energy technologies, solar photovoltaic electricity has one of the highest resource potentials; there is enough energy in the sunlight incident on the surface of the earth to meet the world's energy demands many times over (∼10,000:1). However, significant market penetration requires photovoltaics to be cost competitive with fossil fuels, even when unsubsidized. Currently, balance of system costs, rather than module costs, represent the majority of the total installed cost. Thus, increasing module efficiency is attractive as high efficiency cells can reduce installation size and therefore cost. Tandem photovoltaic architectures can provide a transformative boost in module efficiency over the single junction alternative due to reduced thermalization losses. Silicon photovoltaics is a well established (>90% market share), high efficiency, low cost technology that provides a crystalline template to grow top cells upon. However, the top cell material must satisfy strict requirements, including high efficiency and long reliability, or its presence will simply reduce the performance of the silicon bottom cell. The primary top cell materials considered to date include III-V materials, but the cost of these materials and their sensitivity to defects have proven challenging. In this work, ZnSiP 2 emerges as a wide band gap absorber that has the potential to meet the requirements needed for a top cell in tandem silicon-based photovoltaics. † Electronic Supplementary Information (ESI) available:

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Solar energy conversion properties and defect physics of ZnSiP₂

Martinez

Warren

Gorai

et al. 2016

Energy Environ. Sci.

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“…But at first the purity and quantity of ZGP polycrystalline charges were low, and the size of ZGP single crystals was small [5][6][7]. Until 1997, Schunemann et al successfully used the horizontal gradient freeze (HGF) method to grow large single crystals and the optical absorption coefficient could reach 0.09 cm À 1 at 2.05 mm, which is the basic requirement for the OPO applications [8].…”

Section: Introductionmentioning

confidence: 99%

Influence of the pulling rate on the properties of ZnGeP2 crystal grown by vertical Bridgman method

Shen

2016

Journal of Crystal Growth

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Dotierung von ZnSiP₂ durch Diffusion

Ziegler

Siegel

1975

Cryst Res and Technol

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Diffusion experiments with gallium, indium, aluminium, tin, chromium, gold, lead and tellurium in the ternary semiconductor ZnSiP, were carried out. With elements of the third group of the periodic law it was obtained an unambiguous doping effect demonstrated by temperature dependence of the Hall coefficient and by investigations with the electron microprobe. Diffusion of gallium, aluminium and indium caused the formation of shallow donors in ZnSiP, with activation energies (at vanished impurity concentration) of 30 meV, 65 meV, 70 meV, respectively. From semi-insulating p-ZnSiP, often prepared by crystal growth low resistivity n-ZnSiP, was made by diffusion with gallium and indium.

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Some electrical properties of solution–grown crystals of n-ZnSiP2 and p-ZnGeP2

Cited by 22 publications

References 5 publications

Solar energy conversion properties and defect physics of ZnSiP₂

Solar energy conversion properties and defect physics of ZnSiP₂

Influence of the pulling rate on the properties of ZnGeP2 crystal grown by vertical Bridgman method

Dotierung von ZnSiP₂ durch Diffusion

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Some electrical properties of solution–grown crystals of n-ZnSiP2 and p-ZnGeP2

Cited by 22 publications

References 5 publications

Solar energy conversion properties and defect physics of ZnSiP2

Solar energy conversion properties and defect physics of ZnSiP2

Influence of the pulling rate on the properties of ZnGeP2 crystal grown by vertical Bridgman method

Dotierung von ZnSiP2 durch Diffusion

Contact Info

Product

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Solar energy conversion properties and defect physics of ZnSiP₂

Solar energy conversion properties and defect physics of ZnSiP₂

Dotierung von ZnSiP₂ durch Diffusion